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|1. (WO2017041268) SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR|
|Applicants:||INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
ZHUZHOU CSR TIMES ELECTRIC CO., LTD.
|Title:||SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR|
A self-aligned silicon carbide MOSFET device with optimized P+ regions and a manufacturing method therefor.The self-aligned silicon carbide MOSFET device is formed by connecting a plurality of identical cells in parallel, and these cells of the silicon carbide MOSFET device are evenly arranged.The cell of the silicon carbide MOSFET device comprises two source electrodes (1), one gate electrode (2), one gate oxidation layer (3), two N+ source regions (4), two P+ contact regions (5), two P-wells (6), one N- drift layer (7), one buffer layer (8), one N+ substrate (9), one drain electrode (10) and one isolation medium layer (11).By optimizing P+ regions, good source electrode ohmic contact is formed, and on-resistance is reduced. At the same time, source electrodes (1) and P-wells (6) are in short-circuit connection, so that a parasitic transistor effect of a parasitic NPN and PiN is prevented. The conducting characteristic and a breakdown characteristic of a device are both considered. The present invention can be applied to high-voltage high-frequency silicon carbide MOSFET devices.By adopting a self-alignment manufacturing method, the process is simplified, a channel size is accurately controlled, and transverse and longitudinal power MOSFETs can be manufactured.