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1. (WO2017040868) CVD REACTOR CHAMBER WITH RESISTIVE HEATING
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Pub. No.: WO/2017/040868 International Application No.: PCT/US2016/050016
Publication Date: 09.03.2017 International Filing Date: 01.09.2016
IPC:
H01L 21/205 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/324 (2006.01) ,H01L 21/67 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Applicants:
CRYSTAL SOLAR, INC. [US/US]; 3050 Coronado Drive Santa Clara, CA 95054, US
Inventors:
RAVI, Tirunelveli, S.; US
SIVARAMAKRISHNAN, Visweswaren; US
Agent:
JAFFER, David, H.; US
JAKOPIN, David, A.; US
MACAULAY, John, M.; US
DATTA, Madhumita; US
Priority Data:
62/213,08701.09.2015US
Title (EN) CVD REACTOR CHAMBER WITH RESISTIVE HEATING
(FR) CHAMBRE DE RÉACTEUR DE DÉPÔT CHIMIQUE EN PHASE VAPEUR À CHAUFFAGE RÉSISTIF
Abstract:
(EN) A CVD reactor for deposition of material on substrates, may comprise: an upper gas manifold and a lower gas manifold; and a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row.
(FR) Un réacteur de dépôt chimique en phase vapeur destiné à un dépôt d'un matériau sur des substrats peut comprendre : un collecteur de gaz supérieur et un collecteur de gaz inférieur ; ainsi qu'un porte-substrats comprenant un boîtier rectangulaire étanche aux gaz et ouvert sur les surfaces supérieure et inférieure et une multiplicité de parois planes sur toute la largeur du boîtier. Les parois sont à équidistance, en ligne et orientées les unes vers les autres. Elles définissent une rangée de canaux à l'intérieur du boîtier. Les parois comprennent des fixations de montage destinées à une pluralité de substrats et au moins un élément chauffant électriquement résistif. Le collecteur de gaz supérieur et le collecteur de gaz inférieur sont conçus pour se fixer respectivement sur les surfaces supérieure et inférieure du porte-substrats, pour se raccorder aux extrémités supérieure et inférieure des canaux et pour isoler les flux de gaz dans les canaux impairs des flux de gaz dans les canaux pairs. Les canaux sont numérotés dans l'ordre le long de la rangée.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)