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1. (WO2017040646) SEMICONDUCTOR DIE SUBSTRATE WITH INTEGRAL HEAT SINK

Pub. No.:    WO/2017/040646    International Application No.:    PCT/US2016/049679
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Thu Sep 01 01:59:59 CEST 2016
IPC: H01L 23/34
H01L 21/50
H01L 21/306
Applicants: TEXAS INSTRUMENTS INCORPORATED
TEXAS INSTRUMENTS JAPAN LIMITED
Inventors: MUKHOPADHYAY, Rajarshi
CAROTHERS, Daniel, N.
COOK, Benjamin
Title: SEMICONDUCTOR DIE SUBSTRATE WITH INTEGRAL HEAT SINK
Abstract:
One embodiment of an integrated circuit device (210) includes a semiconductor substrate (212) with a top surface (214), a bottom surface (216) opposite said top surface, and an intermediate portion (244) positioned between the top (214) and bottom (216) surfaces. The device (210) also includes interior substrate surfaces defined by at least one void (242) extending from the bottom surface (216) to the intermediate portion (244).