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1. (WO2017040518) NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES

Pub. No.:    WO/2017/040518    International Application No.:    PCT/US2016/049479
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Aug 31 01:59:59 CEST 2016
IPC: H01L 21/311
C07C 251/08
C07C 251/26
C07C 255/10
Applicants: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
AMERICAN AIR LIQUIDE, INC.
SURLA, Vijay
GUPTA, Rahul
PALLEM, Venkateswara R.
Inventors: SURLA, Vijay
GUPTA, Rahul
PALLEM, Venkateswara R.
Title: NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES
Abstract:
A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C=N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.