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1. (WO2017039948) MEMORY DEVICE ERROR CHECK AND SCRUB MODE AND ERROR TRANSPARENCY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/039948 International Application No.: PCT/US2016/045640
Publication Date: 09.03.2017 International Filing Date: 04.08.2016
IPC:
G11C 29/42 (2006.01) ,G06F 11/10 (2006.01) ,G11C 29/04 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
04
Detection or location of defective memory elements
08
Functional testing, e.g. testing during refresh, power-on self testing (POST) or distributed testing
12
Built-in arrangements for testing, e.g. built-in self testing (BIST)
38
Response verification devices
42
using error correcting codes (ECC) or parity check
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
11
Error detection; Error correction; Monitoring
07
Responding to the occurrence of a fault, e.g. fault tolerance
08
Error detection or correction by redundancy in data representation, e.g. by using checking codes
10
Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
04
Detection or location of defective memory elements
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
HALBERT, John B.; US
BAINS, Kuljit S.; US
Agent:
ANDERSON, Vincent H.; US
FLEMING, Caroline; US
Priority Data:
14/998,18426.12.2015US
62/211,44828.08.2015US
Title (EN) MEMORY DEVICE ERROR CHECK AND SCRUB MODE AND ERROR TRANSPARENCY
(FR) MODE DE DÉTECTION ET DE NETTOYAGE D’ERREURS D’UN DISPOSITIF DE MÉMOIRE ET TRANSPARENCE D’ERREUR
Abstract:
(EN) An error check and scrub (ECS) mode enables a memory device to perform error checking and correction (ECC) and count errors. An associated memory controller triggers the ECS mode with a trigger sent to the memory device. The memory device includes multiple addressable memory locations, which can be organized in segments such as wordlines. The memory locations store data and have associated ECC information. In the ECS mode, the memory device reads one or more memory locations and performs ECC for the one or more memory locations based on the ECC information. The memory device counts error information including a segment count indicating a number of segments having at least a threshold number of errors, and a maximum count indicating a maximum number of errors in any segment.
(FR) Un mode de détection et de nettoyage d’erreurs (mode ECS) permet à un dispositif de mémoire de réaliser une détection et correction d’erreurs (routine ECC) et de compter des erreurs. Un contrôleur de mémoire associé déclenche le mode ECS avec un déclencheur envoyé au dispositif de mémoire. Le dispositif de mémoire comporte de multiples emplacements de mémoire adressables qui peuvent être organisés en segments tels que des lignes de mot. Les emplacements de mémoire stockent des données et ont des informations de routine ECC associées. Dans le mode ECS, le dispositif de mémoire lit un ou plusieurs emplacements de mémoire et réalise la routine ECC pour le ou les emplacements de mémoire sur la base des informations de la routine ECC. Le dispositif de mémoire compte des informations d’erreur comportant un compte de segments, indiquant un nombre de segments ayant au moins un nombre seuil d’erreurs, et un compte maximal indiquant un nombre maximal d’erreurs dans n’importe quel segment.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)