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1. (WO2017039920) PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING

Pub. No.:    WO/2017/039920    International Application No.:    PCT/US2016/045202
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Aug 03 01:59:59 CEST 2016
IPC: H01L 21/02
H01L 21/205
H05H 1/46
H01L 21/683
Applicants: APPLIED MATERIALS, INC.
Inventors: TRAN, Toan Q.
PARK, Soonam
KIM, Junghoon
LUBOMIRSKY, Dmitry
Title: PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING
Abstract:
A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.