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1. (WO2017039780) VERTICAL DIVISION OF THREE-DIMENSIONAL MEMORY DEVICE

Pub. No.:    WO/2017/039780    International Application No.:    PCT/US2016/037763
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Jun 17 01:59:59 CEST 2016
IPC: H01L 21/336
H01L 27/115
H01L 29/788
Applicants: CYPRESS SEMICONDUCTOR CORPORATION
Inventors: SUGINO, Rinji
BELL, Scott
XUE, Lei
Title: VERTICAL DIVISION OF THREE-DIMENSIONAL MEMORY DEVICE
Abstract:
A method of forming a vertical non-volatile (NV) memory device such as 3-D NAND flash memory includes forming a vertical NV memory cell string within an opening disposed in a stack of alternating layers of a first layer and a second layer over a substrate, and dividing the vertical NV memory cell string into two halves with a first vertical deep trench and an isolation dielectric pillar formed in the first vertical deep trench, such that memory bit density of the divided vertical NV memory cell strings double the memory bits of the device.