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1. (WO2017039767) INTERBAND CASCADE LASERS WITH LOW-FILL FACTOR TOP CONTACT FOR REDUCED LOSS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/039767 International Application No.: PCT/US2016/035652
Publication Date: 09.03.2017 International Filing Date: 03.06.2016
IPC:
H01S 5/0625 (2006.01) ,H01S 5/34 (2006.01) ,H01S 3/067 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
06
Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062
by varying the potential of the electrodes
0625
in multi-section lasers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
05
Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
06
Construction or shape of active medium
063
Waveguide lasers, e.g. laser amplifiers
067
Fibre lasers
Applicants:
TEH GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY [US/US]; Naval Research Laboratory 875 North Randolph Street, Suite 1425 Arlington, VA 22203, US
Inventors:
MEYER, Jerry, R.; US
VURGAFTMAN, Igor; US
CANEDY, Chadwick, Lawrence; US
BEWLEY, William, W.; US
KIM, Chul, Soo; US
KIM, Mijin; US
MERRITT, Charles, D.; US
Agent:
BROOME, Kerry, L.; US
Priority Data:
62/171,26905.06.2015US
62/209,55425.08.2015US
62/251,15405.11.2015US
Title (EN) INTERBAND CASCADE LASERS WITH LOW-FILL FACTOR TOP CONTACT FOR REDUCED LOSS
(FR) LASERS À CASCADE INTERBANDES AVEC CONTACT SUPÉRIEUR À FAIBLE FACTEUR DE REMPLISSAGE POUR RÉDUCTION DE PERTE
Abstract:
(EN) A DFB laser having a reduced fill factor and reduced loss. A plurality of spaced-apart contact openings are etched into a dielectric layer situated on top of a laser ridge having a DFB grating layer so that electrical contact between the metal top contact layer and the DFB gratings is made only in the etched openings, since all other areas of the top surface of the DFB-grated laser ridge are insulated from the metal contact layer by the dielectric. The size and shape of contact openings and their spacing are configured so that the ratio of the total area of the openings to the total area of the laser ridge provides a fill factor of less than 100%.
(FR) L'invention concerne un laser DFB ayant un facteur de remplissage réduit et une perte réduite. De multiples ouvertures de contact espacées les unes des autres sont gravées dans une couche diélectrique située sur le haut d'une nervure réalisée au laser comportant une couche de réseau DFB de telle sorte qu'un contact électrique entre la couche de contact supérieure en métal et les réseaux DFB soit établi uniquement dans les ouvertures formées par gravure, étant donné que toutes les autres zones de la surface supérieure de la nervure réalisée au laser à réseau DFB sont isolées de la couche de contact en métal par le diélectrique. La taille et la forme des ouvertures de contact et leur espacement sont conçus de telle sorte que le rapport de l'aire totale des ouvertures à l'aire totale de la nervure réalisée au laser donne un facteur de remplissage inférieur à 100 %.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)