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1. (WO2017039671) TECHNIQUES TO PREVENT FILM CRACKING IN THERMALLY CURED DIELECTRIC FILM, AND ASSOCIATED CONFIGURATIONS

Pub. No.:    WO/2017/039671    International Application No.:    PCT/US2015/048324
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Sep 04 01:59:59 CEST 2015
IPC: H01L 21/027
H01L 21/28
H01L 21/31
Applicants: INTEL CORPORATION
Inventors: KHIRE, Vaibhav S.
GANESAN, Krishna Prakash
LYTLE, Wayne M.
SATTIRAJU, Seshu V.
Title: TECHNIQUES TO PREVENT FILM CRACKING IN THERMALLY CURED DIELECTRIC FILM, AND ASSOCIATED CONFIGURATIONS
Abstract:
Embodiments of the present disclosure describe techniques to prevent film cracking in thermally cured dielectric film, and associated configurations. A dielectric film may be formed on a patterned metal layer and a substrate on which the patterned metal layer is disposed. A photo-patterned dielectric resist film may be formed on the dielectric film, while providing an opening in the dielectric resist film over the metal layer. A first curing process may be performed to remove a solvent from the dielectric resist film. An exposed portion of the dielectric film, that is disposed in the opening, may then be removed. A second curing process may be performed after the exposed portion of the dielectric film is removed, to polymerize the dielectric resist film. Other embodiments may be described and/or claimed.