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1. (WO2017039635) III NITRIDE COMPLEMENTARY TRANSISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/039635 International Application No.: PCT/US2015/047835
Publication Date: 09.03.2017 International Filing Date: 31.08.2015
IPC:
H01L 21/8238 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8238
Complementary field-effect transistors, e.g. CMOS
Applicants:
HRL LABORATORIES, LLC [US/US]; 3011 Malibu Canyon Road Malibu, California 90265-4799, US
Inventors:
CHU, Rongming; US
CAO, Yu; US
Agent:
GALLENSON, Mavis S.; US
Priority Data:
14/841,25831.08.2015US
Title (EN) III NITRIDE COMPLEMENTARY TRANSISTORS
(FR) TRANSISTORS COMPLÉMENTAIRES AU NITRURE DU GROUPE III
Abstract:
(EN) A semiconductor device includes a substrate, a III- nitride buffer layer on the substrate, an N-channel transistor including a Ill-nitride N-channel layer on one portion of the buffer layer, and a Ill-nitride N-barrier layer for providing electrons on top of the N-channel layer, wherein the N-barrier layer has a wider bandgap than the N-channel layer, a P-channel transistor including a Ill-nitride P-barrier layer on another portion of the buffer layer for assisting accumulation of holes, a III- nitride P-channel layer on top of the P-barrier layer, wherein the P-barrier layer has a wider bandgap than the P- channel layer, and a Ill-nitride cap layer doped with P- type dopants on top of the P-channel layer.
(FR) L'invention concerne un dispositif semi-conducteur qui comprend un substrat, une couche tampon à base de nitrure du groupe III sur le substrat, un transistor à canal N comprenant une couche de canal N au nitrure du groupe III sur une partie de la couche tampon, et une couche barrière N au nitrure du groupe III pour fournir des électrons à la partie supérieure de la couche de canal N, la couche barrière N ayant une largeur de bande interdite plus large que la couche de canal N, un transistor à canal P comprenant une couche barrière P au nitrure du groupe III sur une autre partie de la couche tampon pour faciliter l'accumulation de trous, une couche de canal P au nitrure du groupe III sur la partie supérieure de la couche barrière P, la couche barrière P ayant une largeur de bande interdite plus large que la couche de canal P, et une couche superficielle au nitrure du groupe III dopée avec des dopants de type P sur la partie supérieure de la couche de canal P.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)