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1. (WO2017039611) MATERIAL STACKS FOR LOW CURRENT UNIPOLAR MEMRISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/039611 International Application No.: PCT/US2015/047726
Publication Date: 09.03.2017 International Filing Date: 31.08.2015
IPC:
G11C 11/16 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
Applicants:
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive West Houston, TX 77070, US
Inventors:
ZHANG, Minxian Max; US
SAMUELS, Katy; US
WILLIAMS, R. Stanley; US
LI, Zhiyong; US
Agent:
PAGAR, Preetam; US
Priority Data:
Title (EN) MATERIAL STACKS FOR LOW CURRENT UNIPOLAR MEMRISTORS
(FR) EMPILEMENTS DE MATÉRIAUX POUR MEMRISTANCES UNIPOLAIRES À FAIBLE COURANT
Abstract:
(EN) A nonvolatile memory cell includes a diode electrically coupled in series with a unipolar nonvolatile resistance memory device. The unipolar nonvolatile resistance memory device includes a switching material sandwiched between a bottom electrode and a top electrode. The switching material may include silicon dioxide. The bottom electrode and the top electrode may include copper. A memory array utilizing the memory cell and a method for manufacturing the memory array are also provided.
(FR) La présente invention concerne une cellule de mémoire non volatile comprenant une diode couplée électriquement en série à un dispositif de memristance unipolaire non volatile. Le dispositif de memristance unipolaire non volatile comprend un matériau de commutation pris en sandwich entre une électrode inférieure et une électrode supérieure. Le matériau de commutation peut comprendre du dioxyde de silicium. L’électrode inférieure et l’électrode supérieure peuvent comprendre du cuivre. La présente invention concerne en outre un réseau de mémoires utilisant la cellule de mémoire et un procédé de fabrication du réseau de mémoires.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)