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1. (WO2017039235) I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE
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Pub. No.: WO/2017/039235 International Application No.: PCT/KR2016/009494
Publication Date: 09.03.2017 International Filing Date: 26.08.2016
IPC:
G03F 7/004 (2006.01) ,G03F 7/038 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
Applicants:
영창케미칼 주식회사 YOUNG CHANG CHEMICAL CO., LTD [KR/KR]; 경상북도 성주군 선남면 유서리길 174-12, 365동 12호 365-12, 174-12, Yuseori-gil, Seonnam-myeon Seongju-gun Gyeongsangbuk-do 40046, KR
Inventors:
이승훈 LEE, Seung Hun; KR
이승현 LEE, Seung Hyun; KR
윤상웅 YOON, Sang Woong; KR
최영철 CHOI, Young Cheol; KR
Agent:
특허법인 해담 HAEDAM IP GROUP; 서울시 강남구 논현로 503 송촌빌딩 1601호 1601-ho, Songchon Bldg. 503, Nonhyeon-ro Gangnam-gu, Seoul 06132, KR
Priority Data:
10-2015-012140828.08.2015KR
Title (EN) I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE
(FR) COMPOSITION DE RÉSINE PHOTOSENSIBLE NÉGATIVE « I-LINE » AYANT UNE EXCELLENTE RÉSISTANCE À LA GRAVURE
(KO) 에칭 내성이 우수한 I-선용 네가티브형 포토레지스트 조성물
Abstract:
(EN) The present invention relates to an I-line negative type photoresist composition having excellent etching resistance. More specifically, the purpose of the present invention is to provide an I-line negative type photoresist composition, which is suitable to be applied to a semiconductor process and shows excellent etching resistance compared with an existing I-line negative type photoresist.
(FR) La présente invention concerne une composition de résine photosensible négative « i-line » ayant une excellente résistance à la gravure. Plus spécifiquement, l’invention vise à fournir une composition de résine photosensible négative « i-line » qui est appropriée pour être appliquée à un processus associé aux semi-conducteurs et offre une excellente résistance à la gravure comparativement à une résine photosensible négative « i-line » existante.
(KO) 본 발명은 에칭 내성이 우수한 I-선용 네가티브형 포토레지스트 조성물에 관한 것으로, 보다 상세하게는 종래 I-선용 네가티브형 포토레지스트 대비 우수한 에칭 내성을 나타낼 수 있는 반도체 공정에 적용하기에 적합한 I-선용 네가티브형 포토레지스트 조성물을 제공하는 것이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)