Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017039208) LIGHT-EMITTING ELEMENT HAVING ZNO TRANSPARENT ELECTRODE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/039208 International Application No.: PCT/KR2016/009302
Publication Date: 09.03.2017 International Filing Date: 23.08.2016
IPC:
H01L 33/42 (2010.01) ,H01L 33/46 (2010.01) ,H01L 33/00 (2010.01)
[IPC code unknown for H01L 33/42][IPC code unknown for H01L 33/46][IPC code unknown for H01L 33]
Applicants:
서울바이오시스주식회사 SEOUL VIOSYS CO., LTD. [KR/KR]; 경기도 안산시 단원구 산단로 163번길 65-16 65-16, Sandan-ro 163beon-gil, Danwon-gu Ansan-si Gyeonggi-do 15429, KR
Inventors:
이진웅 LEE, Jin Woong; KR
신찬섭 SHIN, Chan Seob; KR
이금주 LEE, Keum Ju; KR
이섬근 LEE, Seom Geun; KR
양명학 YANG, Myoung Hak; KR
Agent:
특허법인에이아이피 AIP PATENT & LAW FIRM; 서울시 강남구 테헤란로 14길 30-1 30-1, Teheran-ro 14-gil, Gangnam-gu Seoul 06239, KR
Priority Data:
10-2015-012505803.09.2015KR
10-2015-012557104.09.2015KR
10-2015-013403422.09.2015KR
Title (EN) LIGHT-EMITTING ELEMENT HAVING ZNO TRANSPARENT ELECTRODE AND METHOD FOR MANUFACTURING SAME
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À ÉLECTRODE TRANSPARENTE ZNO ET SON PROCÉDÉ DE FABRICATION
(KO) ZNO 투명 전극을 갖는 발광 소자 및 그것을 제조하는 방법
Abstract:
(EN) A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.
(FR) L'invention concerne un élément électroluminescent comportant une électrode transparente ZnO, et son procédé de fabrication. L'élément électroluminescent selon un mode de réalisation comprend : une structure électroluminescente comprenant une première couche de semi-conducteur conductrice, une couche active et une seconde couche de semi-conducteur conductrice ; et une électrode transparente ZnO, qui est positionnée sur la seconde couche de semi-conducteur conductrice, qui forme un contact ohmique avec la seconde couche de semi-conducteur conductrice, et qui comprend du ZnO monocristallin, l'angle de diffraction d'un pic de l'électrode transparente ZnO, qui résulte d'un balayage oméga 2 thêta (ω2θ) de diffraction des rayons X (XRD), étant compris dans la plage de ± 1 % par rapport à l'angle de diffraction d'un pic de la seconde couche de semi-conducteur conductrice, qui résulte d'un balayage ω2θ de XRD, et la largeur à mi-hauteur (FWHM) d'un pic principal de l'électrode transparente ZnO, qui résulte d'un balayage oméga (ω) de XRD, étant inférieure ou égale à 900 secondes d'arc.
(KO) ZnO 투명 전극을 갖는 발광 소자 및 그것을 제조하는 방법이 제공된다. 일 실시예에 따른 발광 소자는 제1 도전형 반도체층, 활성층, 및 제2 도전형 반도체층을 포함하는 발광 구조체; 및 제2 도전형 반도체층 상에 위치하며, 제2 도전형 반도체층과 오믹 컨택하며, 단결정 ZnO를 포함하는 ZnO 투명 전극을 포함하고, XRD(X-Ray Diffraction) ω2θ(omega 2theta) 스캔에 의한 ZnO 투명 전극의 피크의 회절 각도는, XRD ω2θ 스캔에 의한 제2 도전형 반도체층의 피크의 회절 각도에 대해 ±1% 범위 내에 있으며, XRD ω(omega) 스캔에 의한 ZnO 투명 전극의 주 피크의 반치폭(FWHM)은 900 arcsec 이하이다.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)