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1. (WO2017039045) SEMICONDUCTOR LIGHT-EMITTING DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/039045 International Application No.: PCT/KR2015/009404
Publication Date: 09.03.2017 International Filing Date: 07.09.2015
IPC:
H01L 33/14 (2010.01) ,H01L 33/06 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants:
주식회사 페타룩스 PETALUX INC. [KR/KR]; 경기도 성남시 중원구 양현로405번길 12, 3층 3F, 12, Yanghyeon-ro 405beon-gil, Jungwon-gu, Seongnam-si Gyeonggi-do 13438, KR
Inventors:
안도열 AHN, Do Yeol; KR
Agent:
특허법인청맥 C.M.PATENT & LAW FIRM,LLP.; 서울시 강남구 테헤란로25길 39, 2층(역삼동,MK빌딩) (MK Bldg., Yeoksam-dong)2F, 39, Teheran-ro 25-gil Gangnam-gu Seoul 06131, KR
Priority Data:
10-2015-012336601.09.2015KR
Title (EN) SEMICONDUCTOR LIGHT-EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR
(KO) 반도체 발광 디바이스
Abstract:
(EN) A semiconductor light-emitting device capable of improving light-emitting efficiency is disclosed. The semiconductor light-emitting device comprises an n-type semiconductor layer, a quantum well layer, a barrier layer, and a p-type semiconductor layer. The n-type semiconductor layer comprises an I-VII compound semiconductor. The quantum well layer is formed on the n-type semiconductor layer and comprises the I-VII compound semiconductor. The barrier layer is formed on the quantum well layer and comprises the I-VII compound semiconductor. The p-type semiconductor layer is formed on the barrier layer and comprises the I-VII compound semiconductor, wherein one or more p-type local doping layers are formed at the barrier layer.
(FR) La présente invention concerne un dispositif électroluminescent à semi-conducteur capable d'améliorer l'efficacité d'émission de lumière. Le dispositif électroluminescent à semi-conducteur comprend une couche semi-conductrice de type n, une couche de puits quantiques, une couche barrière et une couche semi-conductrice de type p. La couche semi-conductrice de type n comprend un semi-conducteur composé I-VII. La couche de puits quantiques est formée sur la couche semi-conductrice de type n et comprend le semi-conducteur des composés (I) à (VII). La couche barrière est formée sur la couche de puits quantiques et comprend le semi-conducteur des composés (I) à (VII). La couche semi-conductrice de type p est formée sur la couche barrière et comprend le semi-conducteur des composés (I) à (VII), une ou plusieurs couches de dopage local de type p étant formées au niveau de la couche barrière.
(KO) 발광 효율을 향상시킬 수 있는 반도체 발광 디바이스가 개시된다. 이러한 반도체 발광 디바이스들은, n-형 반도체층, 양자 우물층, 배리어층 및 p-형 반도체층을 포함한다. n-형 반도체층은 I-VII 화합물 반도체를 포함한다. 상기 양자 우물층은 상기 n-형 반도체층 상부에 형성되고, I-VII 화합물 반도체를 포함한다. 상기 배리어층은 양자 우물층 상부에 형성되고, I-VII 화합물 반도체를 포함한다. 상기 p-형 반도체층은 상기 배리어층 상부에 형성되고, I-VII 화합물 반도체를 포함한다. 이때, 상기 배리어층에는, 하나 이상의 p-형 국소 도핑층이 형성된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)