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1. (WO2017038979) COMPOUND AND METHOD FOR PRODUCING SAME, COMPOSITION, COMPOSITION FOR FORMING OPTICAL COMPONENT, COMPOSITION FOR FORMING LITHOGRAPHY FILM, RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, RADIATION-SENSITIVE COMPOSITION, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR PRODUCING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD
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Pub. No.: WO/2017/038979 International Application No.: PCT/JP2016/075814
Publication Date: 09.03.2017 International Filing Date: 02.09.2016
IPC:
C07C 43/23 (2006.01) ,C07C 41/26 (2006.01) ,C07D 301/28 (2006.01) ,C07D 303/28 (2006.01) ,C07D 303/30 (2006.01) ,C07B 61/00 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
43
Ethers; Compounds having groups, groups or groups
02
Ethers
20
having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
23
containing hydroxy or O-metal groups
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
41
Preparation of ethers; Preparation of compounds having groups, groups or groups
01
Preparation of ethers
18
by reactions not forming ether-oxygen bonds
26
by introduction of hydroxy or O-metal groups
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
301
Preparation of oxiranes
27
Condensation of epihalohydrins or halohydrins with compounds containing active hydrogen atoms
28
by reaction with hydroxyl radicals
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
303
Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
02
Compounds containing oxirane rings
12
with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
18
by etherified hydroxyl radicals
28
Ethers with hydroxy compounds containing oxirane rings
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
303
Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
02
Compounds containing oxirane rings
12
with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
18
by etherified hydroxyl radicals
28
Ethers with hydroxy compounds containing oxirane rings
30
Ethers of oxirane-containing polyhydroxy compounds in which all hydroxyl radicals are etherified with oxirane-containing hydroxy compounds
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
B
GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
61
Other general methods
Applicants:
三菱瓦斯化学株式会社 MITSUBISHI GAS CHEMICAL COMPANY, INC. [JP/JP]; 東京都千代田区丸の内二丁目5番2号 5-2, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008324, JP
Inventors:
越後 雅敏 ECHIGO, Masatoshi; JP
Agent:
稲葉 良幸 INABA, Yoshiyuki; JP
大貫 敏史 ONUKI, Toshifumi; JP
内藤 和彦 NAITO, Kazuhiko; JP
Priority Data:
2015-17384903.09.2015JP
Title (EN) COMPOUND AND METHOD FOR PRODUCING SAME, COMPOSITION, COMPOSITION FOR FORMING OPTICAL COMPONENT, COMPOSITION FOR FORMING LITHOGRAPHY FILM, RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, RADIATION-SENSITIVE COMPOSITION, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR PRODUCING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD
(FR) COMPOSÉ ET SON PROCÉDÉ DE PRODUCTION, COMPOSITION, COMPOSITION POUR FORMER UN COMPOSANT OPTIQUE, COMPOSITION POUR FORMER UN FILM DE LITHOGRAPHIE, COMPOSITION DE RÉSERVE, PROCÉDÉ DE FORMATION D'UN MOTIF DE RÉSERVE, COMPOSITION SENSIBLE AUX RAYONNEMENTS, PROCÉDÉ DE PRODUCTION D'UN FILM AMORPHE, MATÉRIAU POUR FORMER UN FILM DE SOUS-COUCHE LITHOGRAPHIQUE, COMPOSITION POUR FORMER UN FILM DE SOUS-COUCHE LITHOGRAPHIQUE, PROCÉDÉ DE PRODUCTION D'UN FILM DE SOUS-COUCHE LITHOGRAPHIQUE, PROCÉDÉ DE FORMATION D'UN MOTIF DE CIRCUIT ET PROCÉDÉ DE PURIFICATION
(JA) 化合物及びその製造方法、並びに、組成物、光学部品形成用組成物、リソグラフィー用膜形成組成物、レジスト組成物、レジストパターンの形成方法、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法、レジストパターン形成方法、回路パターン形成方法、及び、精製方法
Abstract:
(EN) Provided are: a compound represented by formula (1) and a method for producing same; a composition; a composition for forming an optical component; a composition for forming a lithographic film; a resist composition; a method for forming a resist pattern; a radiation-sensitive composition; a method for producing an amorphous film; a material for forming a lithographic underlayer film; a composition for forming a lithographic underlayer film; a method for producing a lithographic underlayer film; a method for forming a resist pattern; a method for forming a circuit pattern; and a purification method. (1) (In formula (1): R1 is a C1-60 2n-valent moiety or a single bond; R2–R5 are independently a linear, branched, or cyclic C1-30 alkyl moiety, a C6-30 aryl moiety, a C-2-30 alkenyl moiety, a moiety represented by formula (A), a moiety represented by formula (B), a thiol moiety, or a hydroxyl moiety, wherein at least one moiety selected from the group consisting of R2-R5 is a moiety selected from the group consisting of the moieties represented by formula (A) and the moieties represented by formula (B); m2 and m3 are independently integers of 0-8; m4 and m5 are independently integers of 0-9, with the caveat that m2, m3, m4 and m5 cannot be 0 simultaneously; n is an integer of 1-4; and p2-p5 are independently integers of 0-2. (A) (In formula (A), R6 is independently a C1-4 alkylene moiety, and m’ is an integer equal to or greater than 1.) (B) (In formula (B), R6 is as defined above, R7 is a hydrogen atom or a methyl moiety, and m” is 0 or an integer equal to or greater than 1.))
(FR) L'invention concerne : un composé représenté par la formule (1) et son procédé de production ; une composition ; une composition pour former un composant optique ; une composition pour former un film lithographique ; une composition de réserve ; un procédé de formation d'un motif de réserve ; une composition sensible aux rayonnements ; un procédé de production d'un film amorphe ; un matériau pour former un film de sous-couche lithographique ; une composition pour former un film de sous-couche lithographique ; un procédé de production d'un film de sous-couche lithographique ; un procédé de formation d'un motif de circuit; et un procédé de purification. (1) (Dans la formule (1) : R1 est un fragment 2n-valent en C1-60 ou une liaison simple ; R2-R5 sont indépendamment un fragment alkyle linéaire, ramifié, ou cyclique en C1-30, un fragment aryle en C6-30, un fragment alcényle en C2-30, un fragment représenté par la formule (A), un fragment représenté par la formule (B), un fragment thiol ou un fragment hydroxyle, dans lequel au moins un fragment choisi dans le groupe constitué par R2-R5 est un fragment choisi dans le groupe constitué par les fragments représentés par la formule (A) et les fragments représentés par la formule (B) ; m2 et m3 sont indépendamment des entiers de 0 à 8 ; m4 et m5 sont indépendamment des nombres entiers de 0 à 9, à condition que m2, m3, m4 et m5 ne puissent pas être 0 simultanément ; n est un nombre entier de 1 à 4 ; et p2-p5 sont indépendamment des nombres entiers de 0 à 2. (A) (Dans la formule (A), R6 est indépendamment un fragment alkylène en C1-4, et m' est un nombre entier égal ou supérieur à 1). (B) (Dans la formule (B), R6 est tel que défini ci-dessus, R7 est un atome d'hydrogène ou un fragment méthyle, et m" est 0 ou un nombre entier égal ou supérieur à 1)).
(JA) 下記式(1)で表される化合物及びその製造方法、並びに、組成物、光学部品形成用組成物、リソグラフィー用膜形成組成物、レジスト組成物、レジストパターンの形成方法、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法、レジストパターン形成方法、回路パターン形成方法、及び、精製方法。(1)(式(1)中、Rは、炭素数1~60の2n価の基又は単結合であり、R~Rは、各々独立して炭素数1~30の直鎖状、分岐状若しくは環状のアルキル基、炭素数6~30のアリール基、炭素数2~30のアルケニル基、下記式(A)で表される基、下記式(B)で表される基、チオール基又は水酸基であり、ここで、R~Rからなる群より選ばれる少なくとも1つは、下記式(A)で表される基及び下記式(B)で表される基からなる群より選ばれる基であり、m及びmは各々独立して0~8の整数であり、m及びmは各々独立して0~9の整数であり、但し、m、m、m及びmは同時に0となることはなく、nは1~4の整数であり、p~pは各々独立して0~2の整数である。(A)(式(A)中、Rは各々独立して、炭素数1~4のアルキレン基であり、m'は1以上の整数である。)(B)(式(B)中、Rは前記と同義であり、Rは水素原子又はメチル基であり、m''は0又は1以上の整数である。))
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)