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1. (WO2017038948) ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD

Pub. No.:    WO/2017/038948    International Application No.:    PCT/JP2016/075714
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Sep 02 01:59:59 CEST 2016
IPC: H01L 29/786
H01L 21/336
H01L 51/05
H01L 51/30
H01L 51/40
Applicants: FUJIFILM CORPORATION
富士フイルム株式会社
Inventors: YAMAMOTO Yosuke
山本 陽介
TAKIZAWA Hiroo
滝沢 裕雄
SHIGENOI Yuta
滋野井 悠太
TAMAKUNI Fumiko
玉國 史子
GOTO Takashi
後藤 崇
WATANABE Tetsuya
渡邉 哲也
Title: ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD
Abstract:
The present invention addresses the problem of providing the following: an organic thin-film transistor that demonstrates high carrier mobility and low threshold voltage, and that excels in heat resistance; an organic thin-film transistor manufacturing method; an organic semiconductor composition; an organic semiconductor film; and an organic semiconductor film manufacturing method. This organic thin-film transistor includes, on a substrate, the following: a gate electrode; an organic semiconductor layer that contains an organic semiconductor compound; a gate insulation layer disposed between the gate electrode and the organic semiconductor layer; and a source electrode and drain electrode which are disposed in contact with the organic semiconductor layer and which are connected via the organic semiconductor layer. The organic semiconductor layer touches a resin (C) layer formed of the resin (C), or further contains the resin (C). The organic semiconductor compound has a molecular weight of at least 2000, and includes a repeating unit represented by formula (1).