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1. (WO2017038944) ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD

Pub. No.:    WO/2017/038944    International Application No.:    PCT/JP2016/075700
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Sep 02 01:59:59 CEST 2016
IPC: H01L 51/30
H01L 21/336
H01L 29/786
H01L 51/05
H01L 51/40
Applicants: FUJIFILM CORPORATION
富士フイルム株式会社
Inventors: YAMAMOTO Yosuke
山本 陽介
TAKIZAWA Hiroo
滝沢 裕雄
SHIGENOI Yuta
滋野井 悠太
TAMAKUNI Fumiko
玉國 史子
GOTO Takashi
後藤 崇
WATANABE Tetsuya
渡邉 哲也
Title: ORGANIC THIN-FILM TRANSISTOR, ORGANIC THIN-FILM TRANSISTOR MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND ORGANIC SEMICONDUCTOR FILM MANUFACTURING METHOD
Abstract:
The present invention addresses the problem of providing the following: an organic thin-film transistor that demonstrates high carrier mobility and low threshold voltage, and that excels in heat resistance; an organic thin-film transistor manufacturing method; an organic semiconductor composition; an organic semiconductor film; and an organic semiconductor film manufacturing method. This organic thin-film transistor includes, on a substrate, the following: a gate electrode; an organic semiconductor layer that contains an organic semiconductor compound; a gate insulation layer disposed between the gate electrode and the organic semiconductor layer; and a source electrode and drain electrode which are disposed in contact with the organic semiconductor layer and which are connected via the organic semiconductor layer. The organic semiconductor layer comes into contact with a block copolymer layer formed of a block copolymer, or further contains a block copolymer. The organic semiconductor compound has a molecular weight of at least 2000, and includes a repeating unit represented by formula (1).