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1. (WO2017038806) OXIDE DIELECTRIC ELEMENT AND METHOD FOR MANUFACTURING OXIDE DIELECTRIC ELEMENT

Pub. No.:    WO/2017/038806    International Application No.:    PCT/JP2016/075301
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Aug 31 01:59:59 CEST 2016
IPC: H01L 41/053
H01L 21/312
H01L 21/8246
H01L 27/105
H01L 41/09
H01L 41/23
Applicants: ULVAC, INC.
株式会社アルバック
Inventors: SUZUKI Akiyoshi
鈴木 亮由
KIMURA Isao
木村 勲
KOBAYASHI Hiroki
小林 宏樹
MORIKAWA Yasuhiro
森川 泰宏
KUBO Masashi
久保 昌司
Title: OXIDE DIELECTRIC ELEMENT AND METHOD FOR MANUFACTURING OXIDE DIELECTRIC ELEMENT
Abstract:
The present invention provides a technique for a protective film for an oxide dielectric element so that it is possible to improve the piezoelectric properties by lowering the restraining force provided by the protective film, suppress a decrease in permittivity, and prevent a decrease in physical properties caused by deterioration in reduction due to hydrogen ions. This oxide dielectric element 15 is provided with a Si substrate 1 and an oxide dielectric thin-film laminate layer 8 that is provided on the Si substrate 1 and has first and second electrode layers 4, 6 provided on either side of an oxide dielectric layer 5. The oxide dielectric thin-film laminate layer 8 is covered with a protective film 7 comprising a polymer having a high molecular weight. The protective film 7 can be formed using vapor deposition polymerization.