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1. (WO2017038771) MANUFACTURING METHOD FOR ORGANIC SEMICONDUCTOR DEVICE, AND POWDER
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Pub. No.: WO/2017/038771 International Application No.: PCT/JP2016/075215
Publication Date: 09.03.2017 International Filing Date: 29.08.2016
Chapter 2 Demand Filed: 27.06.2017
IPC:
H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
国立大学法人千葉大学 NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY [JP/JP]; 千葉県千葉市稲毛区弥生町1番33号 1-33, Yayoicho, Inage-ku, Chiba-shi, Chiba 2638522, JP
日本化薬株式会社 NIPPON KAYAKU KABUSHIKIKAISHA [JP/JP]; 東京都千代田区丸の内二丁目1番1号 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1000005, JP
Inventors:
酒井 正俊 SAKAI Masatoshi; JP
工藤 一浩 KUDO Kazuhiro; JP
貞光 雄一 SADAMITSU Yuichi; JP
Agent:
特許業務法人あーく特許事務所 ARC PATENT ATTORNEYS' OFFICE; 大阪府大阪市北区曽根崎1丁目1番2号 1-2, Sonezaki 1-chome, Kita-ku, Osaka-shi, Osaka 5300057, JP
Priority Data:
2015-16849128.08.2015JP
Title (EN) MANUFACTURING METHOD FOR ORGANIC SEMICONDUCTOR DEVICE, AND POWDER
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR ORGANIQUE, ET POUDRE
(JA) 有機半導体デバイスの製造方法、および粉体
Abstract:
(EN) Provided is a manufacturing method for an organic semiconductor device capable of forming an organic semiconductor thin film without using a solvent and at a high-throughput. Also provided is a material suitable for the same. The manufacturing method for the organic semiconductor device includes a step wherein a charged powder including an organic semiconductor material is patterned upon a substrate (23) by applying an electrostatic field.
(FR) L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteur organique permettant de former une couche mince de semi-conducteur organique sans utiliser un solvant et avec un rendement élevé. Un matériau approprié à cet effet est également décrit. Le procédé de fabrication du dispositif à semi-conducteur organique comprend une étape à laquelle une poudre chargée comprenant un matériau semi-conducteur organique est modelée sur un substrat (23) par application d'un champ électrostatique.
(JA) 無溶媒かつ高スループットで有機半導体薄膜を形成できる有機半導体デバイスの製造方法を提供するとともに、それに適した材料を提供する。有機半導体デバイスの製造方法は、有機半導体材料を含む帯電した粉体を静電場の印加により基材(23)上にパターニングする工程を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)