Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017038745) PLURALITY OF SAPPHIRE SINGLE CRYSTALS AND PRODUCTION METHOD FOR SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/038745 International Application No.: PCT/JP2016/075155
Publication Date: 09.03.2017 International Filing Date: 29.08.2016
IPC:
C30B 29/20 (2006.01) ,C30B 15/34 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
16
Oxides
20
Aluminium oxides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
34
Edge-defined film-fed crystal growth using dies or slits
Applicants:
並木精密宝石株式会社 NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA [JP/JP]; 東京都足立区新田3丁目8番22号 8-22, Shinden 3-Chome, Adachi-ku, Tokyo 1238511, JP
Inventors:
古滝 敏郎 KOTAKI Toshiro; JP
斎藤 弘倫 SAITO Hironori; JP
高橋 正幸 TAKAHASHI Masayuki; JP
樋口 数人 HIGUCHI Kazuto; JP
佐藤 次男 SATO Tsugio; JP
鈴木 勝一 SUZUKI Shoichi; JP
伊藤 訓彦 ITO Norihiko; JP
Priority Data:
2015-17456704.09.2015JP
Title (EN) PLURALITY OF SAPPHIRE SINGLE CRYSTALS AND PRODUCTION METHOD FOR SAME
(FR) PLURALITÉ DE MONOCRISTAUX DE SAPHIR ET LEUR PROCÉDÉ DE FABRICATION
(JA) 複数のサファイア単結晶及びその製造方法
Abstract:
(EN) [Problem] To provide a plurality of sapphire single crystals for which excellent mass-productivity is achieved by controlling variations in the spreading speeds of different sapphire single crystals during multi-growth of sapphire single crystals. Also to provide a production method for the plurality of sapphire single crystals. [Solution] By optimizing the balance between a temperature gradient along the direction in which dies are aligned and a temperature gradient along the long direction of the dies, the present invention controls variations in spreading speed and sets a start point for a transition toward a straight body part of a sapphire single crystal at a value that is within a prescribed range that corresponds to the width of the straight body part.
(FR) [Problème] Fournir une pluralité de monocristaux de saphir pour lesquels une excellente productivité en masse est obtenue par contrôle des variations dans les germes en cours de propagation de différents monocristaux de saphir pendant la multi-croissance de monocristaux de saphir. L’invention concerne en outre un procédé de production pour la pluralité de monocristaux de saphir. [Solution] Par optimisation de l’équilibre entre un gradient de température le long de la direction dans laquelle des matrices sont alignées et un gradient de température le long de la direction de la longueur des matrices, la présente invention contrôle les variations de vitesse de propagation et définit un point de départ pour une transition vers une partie de corps rectiligne d’un monocristal de saphir à une valeur qui est dans une plage prescrite qui correspond à la largeur de la partie rectiligne du corps.
(JA) 【課題】 サファイア単結晶のマルチ育成において、各サファイア単結晶間のスプレーディング速度のばらつきを制御することにより、量産性に優れた複数のサファイア単結晶及びその製造方法を提供すること。 【解決手段】 ダイの長手方向の温度勾配と、ダイの並び方向の温度勾配のバランスを最適化することにより、スプレーディング速度のばらつきを制御し、直胴部分への移行開始点をサファイア単結晶の直胴部分の幅に応じた所定の範囲内の値に設定する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)