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1. (WO2017038733) PHOTOELECTRIC CONVERSION ELEMENT

Pub. No.:    WO/2017/038733    International Application No.:    PCT/JP2016/075121
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Tue Aug 30 01:59:59 CEST 2016
IPC: H01L 31/0224
H01L 31/0747
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: ASANO, Naoki
浅野 直城
KOBAYASHI, Masamichi
小林 正道
Title: PHOTOELECTRIC CONVERSION ELEMENT
Abstract:
A photoelectric conversion device comprises an n-type semiconductor substrate (1), a p-type amorphous semiconductor film (3) on a first surface (1a) side and a side surface (1c) of the semiconductor substrate (1), an n-type amorphous semiconductor film on the first surface side of the semiconductor substrate, a p-electrode (7) on the p-type amorphous semiconductor film (3), and an n-electrode (8) on the n-type amorphous semiconductor film (4). The p-electrode (7) is located on the p-type amorphous semiconductor film (3) that is positioned on the first surface (1a) side and the side surface (1c) of the semiconductor substrate (1).