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1. (WO2017038676) METHOD FOR FORMING PZT FERROELECTRIC FILM

Pub. No.:    WO/2017/038676    International Application No.:    PCT/JP2016/074959
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Sat Aug 27 01:59:59 CEST 2016
IPC: H01L 41/43
H01L 21/316
H01L 21/8246
H01L 27/105
H01L 41/187
H01L 41/318
Applicants: JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
国立大学法人北陸先端科学技術大学院大学
MITSUBISHI MATERIALS CORPORATION
三菱マテリアル株式会社
Inventors: TAGASHIRA, Yuki
田頭 裕己
SHIMURA, Reijiro
志村 礼司郎
TAKAMURA, Yuzuru
高村 禅
LI, Jinwang
李 金望
SHIMODA, Tatsuya
下田 達也
WATANABE, Toshiaki
渡辺 敏昭
SOYAMA, Nobuyuki
曽山 信幸
Title: METHOD FOR FORMING PZT FERROELECTRIC FILM
Abstract:
The present invention comprises: a step for applying a liquid composition for forming a PZT ferroelectric film; a step for drying the film obtained by applying the liquid composition; a step for irradiating UV rays onto the dried film at a temperature of 150-200°C in an oxygen-containing atmosphere; and a step for firing and crystallizing a UV-irradiated-ferroelectric-film precursor film after the coating step, the drying step, and the UV irradiation step have been performed one or more times by raising the temperature in the oxygen-containing atmosphere at a speed of 0.5°C/second or higher or raising the temperature in the non-oxygen-containing atmosphere at a speed of 0.2°C/second or higher and holding the temperature at 400-500°C. The amount of the liquid composition applied in each cycle is set so that the thickness of the ferroelectric film is 150 nm or more for each application, and ozone is supplied during UV irradiation.