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|1. (WO2017038676) METHOD FOR FORMING PZT FERROELECTRIC FILM|
|Applicants:||JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
MITSUBISHI MATERIALS CORPORATION
|Title:||METHOD FOR FORMING PZT FERROELECTRIC FILM|
The present invention comprises: a step for applying a liquid composition for forming a PZT ferroelectric film; a step for drying the film obtained by applying the liquid composition; a step for irradiating UV rays onto the dried film at a temperature of 150-200°C in an oxygen-containing atmosphere; and a step for firing and crystallizing a UV-irradiated-ferroelectric-film precursor film after the coating step, the drying step, and the UV irradiation step have been performed one or more times by raising the temperature in the oxygen-containing atmosphere at a speed of 0.5°C/second or higher or raising the temperature in the non-oxygen-containing atmosphere at a speed of 0.2°C/second or higher and holding the temperature at 400-500°C. The amount of the liquid composition applied in each cycle is set so that the thickness of the ferroelectric film is 150 nm or more for each application, and ozone is supplied during UV irradiation.