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1. (WO2017038591) SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, SILICON CARBIDE SINGLE CRYSTAL EPITAXIAL WAFER, ELECTRONIC DEVICE

Pub. No.:    WO/2017/038591    International Application No.:    PCT/JP2016/074724
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Aug 26 01:59:59 CEST 2016
IPC: C30B 29/36
C23C 14/06
C23C 16/42
H01L 21/205
Applicants: DENSO CORPORATION
株式会社デンソー
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
一般財団法人電力中央研究所
Inventors: OKAMOTO Takeshi
岡本 武志
KONDO Hiroyuki
近藤 宏行
KANEMURA Takashi
金村 高司
MIYAHARA Shinichiro
宮原 真一朗
EBIHARA Yasuhiro
海老原 康裕
ONDA Shoichi
恩田 正一
TSUCHIDA Hidekazu
土田 秀一
KAMATA Isaho
鎌田 功穂
TANUMA Ryohei
田沼 良平
Title: SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, SILICON CARBIDE SINGLE CRYSTAL EPITAXIAL WAFER, ELECTRONIC DEVICE
Abstract:
In this silicon carbide single crystal, a threading dislocation (20) is present, whereof the dislocation line (21) traverses the c-plane while the Burgers vector (bv) has at least a component in the c-axis direction. Among the threading dislocations, the density is 300/cm2 or less for the threading dislocations where the angle (θ1) formed by the Burgers vector and the direction of the dislocation line is greater than 0° and 40° or less, and the density is 30/cm2 or less for the threading dislocations where the angle is greater than 40°.