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1. (WO2017038590) METHOD FOR MANUFACTURING GRAPHENE, APPARATUS FOR MANUFACTURING GRAPHENE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/038590 International Application No.: PCT/JP2016/074722
Publication Date: 09.03.2017 International Filing Date: 18.08.2016
IPC:
C23C 16/02 (2006.01) ,C23C 16/26 (2006.01) ,C23C 16/452 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
02
Pretreatment of the material to be coated
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
26
Deposition of carbon only
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
448
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
452
by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号  3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors:
松本 貴士 MATSUMOTO, Takashi; JP
Agent:
別役 重尚 BECCHAKU, Shigehisa; 東京都港区東新橋2丁目16番1号 ルーシスビル2階  Lusis Bldg. 2nd Floor, 16-1, Higashi Shinbashi 2-chome, Minato-ku, Tokyo 1050021, JP
Priority Data:
2015-17308602.09.2015JP
Title (EN) METHOD FOR MANUFACTURING GRAPHENE, APPARATUS FOR MANUFACTURING GRAPHENE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
(FR) PROCÉDÉ DE FABRICATION DE GRAPHÈNE, APPAREIL DE FABRICATION DE GRAPHÈNE ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE
(JA) グラフェンの製造方法、グラフェンの製造装置及び電子デバイスの製造方法
Abstract:
(EN) Provided is a method for manufacturing graphene, whereby high-quality graphene can be manufactured. A graphene manufacturing apparatus 10 is provided with an accommodating chamber 11 for accommodating a substrate S, an ionization auxiliary chamber 13 for generating hydrocarbon positive ions 20, a grounding plate 14 facing the ionization auxiliary chamber 13, and a third gas supply device 17, the hydrocarbon positive ion 20 being accelerated by an electrostatic field 21 between the ionization auxiliary chamber 13 and the grounding plate 14 and colliding with acetylene 24, electrically neutral hydrocarbon molecules 43 generated from hydrocarbon positive ions 20 by charge conversion forming a molecular beam 26, and the graphene manufacturing apparatus 10 furthermore supplying an adsorption gas including a six-membered ring structure of carbon atoms toward the substrate S from the third gas supply device 17 and causing a plurality of six-membered ring structures 28 to be adsorbed on a surface of the substrate S, and then radiating the molecular beam 26 of the hydrocarbon molecules 43 to the surface of the substrate S.
(FR) L'invention concerne un procédé de fabrication de graphène grâce auquel du graphène de haute qualité peut être fabriqué. L'invention concerne un appareil de fabrication de graphène 10 pourvu d'une chambre de logement 11 permettant de recevoir un substrat S, d'une chambre auxiliaire d'ionisation 13 permettant de créer des ions positifs d'hydrocarbures 20, d'une plaque de mise à la terre 14 faisant face à la chambre auxiliaire d'ionisation 13, et d'un troisième dispositif d'alimentation en gaz 17, l'ion positif d'hydrocarbure 20 étant accéléré par un champ électrostatique 21 entre la chambre auxiliaire d'ionisation 13 et la plaque de mise à la terre 14 et entrant en collision avec de l'acétylène 24, des molécules d'hydrocarbure électriquement neutres 43 créées à partir d'ions positifs d'hydrocarbure 20 par conversion de charge formant un faisceau moléculaire 26, l'appareil de fabrication de graphène 10 introduisant en outre un gaz d'adsorption comprenant une structure cyclique à six chaînons d'atomes de carbone dans le substrat S à partir du troisième dispositif d'alimentation en gaz 17 et provoquant l'adsorption d'une pluralité de structures cycliques à six chaînons 28 sur une surface du substrat S, puis rayonnant le faisceau moléculaire 26 des molécules d'hydrocarbure 43 à la surface du substrat S
(JA) 高品質のグラフェンを製造することができるグラフェンの製造方法を提供する。グラフェンの製造装置10は基板Sを収容する収容室11と、炭化水素陽イオン20を生成するイオン化副室13と、イオン化副室13に対向する接地板14と、第3のガス供給装置17とを備え、炭化水素陽イオン20はイオン化副室13及び接地板14の間の静電場21によって加速されてアセチレン24と衝突し、荷電変換によって各炭化水素陽イオン20から生じた電気的に中性の各炭化水素分子43は分子ビーム26を形成し、さらに、グラフェンの製造装置10は、第3のガス供給装置17から基板Sへ向けて炭素原子の六員環構造を含む吸着ガスを供給して基板Sの表面へ複数の六員環構造28を吸着させ、その後、基板Sの表面へ炭化水素分子43の分子ビーム26を照射する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)