Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017038555) FOCUS RING AND METHOD FOR PRODUCING FOCUS RING
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/038555 International Application No.: PCT/JP2016/074491
Publication Date: 09.03.2017 International Filing Date: 23.08.2016
IPC:
H01L 21/3065 (2006.01) ,C04B 35/565 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515
based on non-oxides
56
based on carbides
565
based on silicon carbide
Applicants:
住友大阪セメント株式会社 SUMITOMO OSAKA CEMENT CO., LTD. [JP/JP]; 東京都千代田区六番町6番地28 6-28, Rokuban-cho, Chiyoda-ku, Tokyo 1028465, JP
Inventors:
長友 大朗 NAGATOMO Hiroaki; JP
Agent:
志賀 正武 SHIGA Masatake; JP
高橋 詔男 TAKAHASHI Norio; JP
鈴木 三義 SUZUKI Mitsuyoshi; JP
Priority Data:
2015-17416603.09.2015JP
2016-01384927.01.2016JP
Title (EN) FOCUS RING AND METHOD FOR PRODUCING FOCUS RING
(FR) ANNEAU DE FOCALISATION ET PROCÉDÉ DE PRODUCTION D'ANNEAU DE FOCALISATION
(JA) フォーカスリング、フォーカスリングの製造方法
Abstract:
(EN) The present invention provides a focus ring having high plasma resistance. The present invention also provides a method for producing a focus ring, by which a focus ring having high plasma resistance is able to be easily produced. A focus ring according to the present invention is formed of a sintered body of silicon carbide. The sintered body is composed of a plurality of first crystal grains having an α-SiC crystal structure and a plurality of second crystal grains having a β-SiC crystal structure. The sintered body contains the first crystal grains in an amount of 70% by volume or more relative to the total of the first crystal grains and the second crystal grains. The volume average crystallite diameter of the first crystal grains is 10 μm or less.
(FR) La présente invention concerne un anneau de focalisation offrant une résistance au plasma élevée. La présente invention concerne également un procédé de production d'un anneau de focalisation permettant de produire facilement un anneau de focalisation offrant une résistance au plasma élevée. Un anneau de focalisation selon la présente invention est formé d'un corps fritté en carbure de silicium. Le corps fritté est composé d'une pluralité de premiers grains cristallins de structure cristalline α-SiC et d'une pluralité de seconds grains cristallins de structure cristalline β-SiC. Le corps fritté contient les premiers grains cristallins à raison de 70 % en volume ou plus par rapport au total des premiers grains cristallins et des seconds grains cristallins. Le diamètre de cristallite moyen en volume des premiers grains cristallins est de 10 µm ou moins.
(JA) 本発明は、耐プラズマ性が高いフォーカスリングを提供する。また、耐プラズマ性が高いフォーカスリングを容易に製造可能なフォーカスリングの製造方法を提供する。本発明のフォーカスリングは、炭化ケイ素の焼結体からなるフォーカスリングであって、焼結体は、α-SiC型の結晶構造を有する複数の第1結晶粒と、β-SiC型の結晶構造を有する複数の第2結晶粒と、からなり、第1結晶粒と第2結晶粒との合計に対して、第1結晶粒を70体積%以上含み、第1結晶粒の体積平均結晶子径が、10μm以下である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)