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1. (WO2017038518) SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/038518    International Application No.:    PCT/JP2016/074313
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Tue Aug 23 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 29/06
H01L 29/12
Applicants: DENSO CORPORATION
株式会社デンソー
TOYOTA JIDOSHA KABUSHIKI KAISHA
トヨタ自動車株式会社
Inventors: AOI Sachiko
青井 佐智子
YAMASHITA Yusuke
山下 侑佑
WATANABE Yukihiko
渡辺 行彦
SUGIMOTO Masahiro
杉本 雅裕
EBIHARA Yasuhiro
海老原 康裕
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
A semiconductor substrate (10) of a silicon carbide semiconductor device (1) has: a first-conductivity-type drift region (12); second-conductivity-type field relaxation regions (13) provided on the drift region and provided so as to cover the bottom surface of trench gates (30); a first-conductivity-type current dispersion region (14) provided on the field relaxation regions so as to be in contact with the side surfaces of the trench gates and the drift region; a second-conductivity-type body region (15) provided on the current dispersion region so as to be in contact with the side surfaces of the trench gates; and first-conductivity-type source regions (17) provided on the body region so as to be in contact with the side surfaces of the trench gates. The field relaxation regions are configured so as to short-circuit to the body region.