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|1. (WO2017038518) SILICON CARBIDE SEMICONDUCTOR DEVICE|
TOYOTA JIDOSHA KABUSHIKI KAISHA
|Title:||SILICON CARBIDE SEMICONDUCTOR DEVICE|
A semiconductor substrate (10) of a silicon carbide semiconductor device (1) has: a first-conductivity-type drift region (12); second-conductivity-type field relaxation regions (13) provided on the drift region and provided so as to cover the bottom surface of trench gates (30); a first-conductivity-type current dispersion region (14) provided on the field relaxation regions so as to be in contact with the side surfaces of the trench gates and the drift region; a second-conductivity-type body region (15) provided on the current dispersion region so as to be in contact with the side surfaces of the trench gates; and first-conductivity-type source regions (17) provided on the body region so as to be in contact with the side surfaces of the trench gates. The field relaxation regions are configured so as to short-circuit to the body region.