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1. (WO2017038447) NITRIDE SURFACE-EMITTING LASER

Pub. No.:    WO/2017/038447    International Application No.:    PCT/JP2016/073882
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Aug 17 01:59:59 CEST 2016
IPC: H01S 5/183
H01S 5/343
Applicants: SONY CORPORATION
ソニー株式会社
Inventors: IZUMI, Shoichiro
泉 将一郎
HAMAGUCHI, Tatsushi
濱口 達史
FUTAGAWA, Noriyuki
風田川 統之
KURAMOTO, Masaru
倉本 大
Title: NITRIDE SURFACE-EMITTING LASER
Abstract:
A first nitride surface-emitting laser comprising: a first dielectric multilayer film and a second dielectric multilayer film that are provided upon a substrate and are adjacent to each other; a current injection region provided at a position facing the first dielectric multilayer film; and an opening provided between the first dielectric multilayer film and the second dielectric multilayer film. When the distance between the first dielectric multilayer film and the second dielectric multilayer film is W and the thickness of the first dielectric multilayer film in the normal direction relative to the substrate is H, the first dielectric multilayer film, the opening, and the current injection region are formed such that an angle θ is at least arctan (H/W) and no more than 90°, said angle θ being between the upper surface of the first dielectric multilayer film and a line connecting, by the shortest distance, an end edge of the upper surface of the first dielectric multilayer film and an end edge of the current injection region.