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1. (WO2017038389) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/038389 International Application No.: PCT/JP2016/073244
Publication Date: 09.03.2017 International Filing Date: 08.08.2016
IPC:
H01L 29/739 (2006.01) ,H01L 21/336 (2006.01) ,H01L 27/04 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/861 (2006.01) ,H01L 29/868 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
Applicants:
株式会社デンソー DENSO CORPORATION [JP/JP]; 愛知県刈谷市昭和町1丁目1番地 1-1, Showa-cho, Kariya-city Aichi 4488661, JP
Inventors:
河野 憲司 KOUNO Kenji; JP
Agent:
金 順姫 JIN Shunji; JP
Priority Data:
2015-16939628.08.2015JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract:
(EN) This semiconductor device is provided with a semiconductor substrate (10) that has: a first conductivity-type drift layer (11); a second conductivity-type base layer (12) formed on a surface layer portion of the drift layer; and second conductivity-type collector layers (21) and first conductivity-type cathode layers (22), which are formed on the drift layer side that is the reverse side of the base layer. Semiconductor substrate regions operating as IGBT elements are defined as IGBT regions (1a), and semiconductor substrate regions operating as diode elements are defined as diode regions (1b), and the IGBT regions and the diode regions are alternately formed repeatedly. The IGBT regions and the diode regions are demarcated from each other by boundaries between the collector layers and the cathode layers. By having the collector layers as first collector layers, the semiconductor device is provided with second collector layers on the semiconductor substrate surface on the side on which the first collector layers and the cathode layers are formed, said second collector layers having a higher second conductivity-type impurity concentration than the first collector layers.
(FR) Le dispositif à semi-conducteur, selon l'invention, est pourvu d'un substrat semi-conducteur (10) qui a : une couche de dérive d'un premier type de conductivité (11) ; une couche de base d'un second type de conductivité (12) qui est formée dans une section de couche superficielle de la couche de dérive ; et des couches de collecteur d'un second type de conductivité (21) ainsi que des couches de cathode d'un premier type de conductivité (22), qui sont formées du côté couche de dérive qui est le côté opposé à la couche de base. Des régions de substrat semi-conducteur fonctionnant en tant qu'éléments de transistor bipolaire à porte isolée sont définies comme régions de transistor bipolaire à porte isolée (1a), et des régions de substrat semi-conducteur fonctionnant en tant qu'éléments de diode sont définies comme régions de diode (1b), et les régions de transistor bipolaire à porte isolée ainsi que les régions de diode sont formées en alternance de manière répétée. Les régions de transistor bipolaire à porte isolée et les régions de diode sont délimitées au moyen de limites entre les couches de collecteur et les couches de cathode. En ayant les couches de collecteur en tant que premières couches de collecteur, le dispositif à semi-conducteur est équipé de secondes couches de collecteur sur la surface du substrat semi-conducteur sur le côté sur lequel sont formées les premières couches de collecteur et les couches de cathode, lesdites secondes couches de collecteur ayant une plus grande concentration en impuretés d'un second type de conductivité que les premières couches de collecteur.
(JA) 半導体装置は、第1導電型のドリフト層(11)と、ドリフト層の表層部に形成された第2導電型のベース層(12)と、ドリフト層のうちのベース層側と反対側に形成された第2導電型のコレクタ層(21)および第1導電型のカソード層(22)と、を有する半導体基板(10)を備える。半導体基板のうちのIGBT素子として動作する領域をIGBT領域(1a)とすると共にダイオード素子として動作する領域をダイオード領域(1b)として、IGBT領域とダイオード領域とが交互に繰り返し形成されている。IGBT領域とダイオード領域とは、コレクタ層とカソード層との境界によって区画されている。コレクタ層を第1コレクタ層として、半導体装置は、半導体基板のうちの第1コレクタ層およびカソード層が形成された側の面に、第1コレクタ層よりも第2導電型不純物濃度が高くされた第2コレクタ層を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)