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1. (WO2017038372) ACTIVE ELEMENT AND METHOD FOR MANUFACTURING ACTIVE ELEMENT

Pub. No.:    WO/2017/038372    International Application No.:    PCT/JP2016/072945
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Aug 05 01:59:59 CEST 2016
IPC: H01L 21/336
H01L 29/786
Applicants: Nissha Co., Ltd.
NISSHA株式会社
Inventors: NADA, Hideaki
灘 秀明
Title: ACTIVE ELEMENT AND METHOD FOR MANUFACTURING ACTIVE ELEMENT
Abstract:
[Problem] The present invention provides an active element wherein a positional shift of a partition wall with respect to electrodes can be suppressed, and a method for manufacturing the active element. [Solution] This active element has: a base material 2; a first electrode 5 and a second electrode 6, which are formed adjacent to each other on one main surface of the base material 2; an organic semiconductor layer 9, which is formed on the one main surface of the base material 2 such that at least a region between the first electrode 5 and the second electrode 6 is covered with the organic semiconductor layer; and partition walls 12, which are formed on the one main surface of the base material 2, said partition walls being on the sides further toward the outside in the surface direction than the organic semiconductor layer 9, and in regions different from a region where the first electrode 5 and the second electrode 6 are formed. The partition walls 12 are formed of a conductive material.