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1. (WO2017038347) METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR PRODUCING FZ SINGLE-CRYSTAL SILICON
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/038347 International Application No.: PCT/JP2016/072592
Publication Date: 09.03.2017 International Filing Date: 02.08.2016
IPC:
C01B 33/035 (2006.01) ,C30B 29/06 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
02
Silicon
021
Preparation
027
by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035
by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
Applicants:
信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP/JP]; 東京都千代田区大手町二丁目6番1号 6-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
宮尾 秀一 MIYAO, Shuichi; JP
岡田 哲郎 OKADA, Tetsuro; JP
祢津 茂義 NETSU, Shigeyoshi; JP
Agent:
大野 聖二 OHNO, Seiji; JP
片山 健一 KATAYAMA, Ken-ichi; JP
Priority Data:
2015-17474004.09.2015JP
Title (EN) METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD, AND METHOD FOR PRODUCING FZ SINGLE-CRYSTAL SILICON
(FR) PROCÉDÉ DE FABRICATION DE BARREAUX DE SILICIUM POLYCRISTALLIN, ET PROCÉDÉ DE FABRICATION DE SILICIUM MONOCRISTALLIN PAR FUSION À ZONE FLOTTANTE
(JA) 多結晶シリコン棒の製造方法およびFZ単結晶シリコンの製造方法
Abstract:
(EN) During the synthesis of a polycrystalline silicon rod, when the polycrystalline silicon deposition temperatures in a region in the vicinity of a silicon core wire, an R/2 region, and an outermost surface region are respectively represented by T1, T2, and T3, said deposition temperatures are set such that T1 > T2 > T3, and the polycrystalline silicon is deposited. Alternatively, when the polycrystalline silicon deposition temperatures in the region in the vicinity of the silicon core wire, the R/2 region, and the outermost surface region are respectively represented by T1, T2, and T3, and ∆T represents the temperature difference between T3 and the temperature T1' of the region in the vicinity of the silicon core wire when the polycrystalline silicon is being deposited in the outermost surface region, and T1 > T2 and T2 < T3, said temperature difference is set such that T1 > T3+∆T, and the polycrystalline silicon is deposited.
(FR) Lors de la synthèse de barreaux de silicium polycristallin, lorsque les températures de dépôt d’un silicium polycristallin dans une région voisine d’un fil central de silicium, dans une région R/2 et dans une région de surface la plus externe, sont respectivement représentées par T1, T2 et T3, il est établi queT1>T2>T3, et le silicium polycristallin est ainsi déposé. En outre, lorsque les températures de dépôt d’un silicium polycristallin dans une région voisine d’un fil central de silicium, dans une région R/2 et dans une région de surface la plus externe, sont respectivement représentées par T1, T2 et T3, T1>T2 et T2<T3, et lorsque la différence de température entre une température T1´dans la région voisine du fil central de silicium lors du dépôt du silicium polycristallin dans la région de surface la plus externe, et T3, est représentée par ΔT, il est établi que T1>T3+ΔT, et le silicium polycristallin est ainsi déposé.
(JA) 多結晶シリコン棒を合成する際に、シリコン芯線の近傍領域、R/2領域、最表面領域における多結晶シリコンの析出温度をそれぞれT1、T2、T3としたときに、T1>T2>T3に設定して多結晶シリコンを析出させる。または、シリコン芯線の近傍領域、R/2領域、最表面領域における多結晶シリコンの析出温度をそれぞれT1、T2、T3としたときに、T1>T2かつT2<T3とし、さらに、最表面領域における多結晶シリコンの析出時におけるシリコン芯線の近傍領域の温度T1´とT3との温度差をΔTとしたときに、T1>T3+ΔTとなるように設定して多結晶シリコンを析出させる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)