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1. (WO2017038344) SEMICONDUCTOR DEVICE, VEHICLE-MOUNTED SEMICONDUCTOR DEVICE, AND VEHICLE-MOUNTED CONTROL DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/038344 International Application No.: PCT/JP2016/072578
Publication Date: 09.03.2017 International Filing Date: 02.08.2016
IPC:
H01L 21/822 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/76 (2006.01) ,H01L 21/82 (2006.01) ,H01L 27/04 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
日立オートモティブシステムズ株式会社 HITACHI AUTOMOTIVE SYSTEMS, LTD. [JP/JP]; 茨城県ひたちなか市高場2520番地 2520, Takaba, Hitachinaka-shi, Ibaraki 3128503, JP
Inventors:
大島 隆文 OSHIMA Takayuki; JP
和田 真一郎 WADA Shinichirou; JP
池ヶ谷 克己 IKEGAYA Katsumi; JP
米田 浩志 YONEDA Hiroshi; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
2015-17430804.09.2015JP
Title (EN) SEMICONDUCTOR DEVICE, VEHICLE-MOUNTED SEMICONDUCTOR DEVICE, AND VEHICLE-MOUNTED CONTROL DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR, DISPOSITIF SEMI-CONDUCTEUR MONTÉ SUR UN VÉHICULE, ET DISPOSITIF DE COMMANDE MONTÉ SUR UN VÉHICULE
(JA) 半導体装置、車載用半導体装置および車載制御装置
Abstract:
(EN) To provide a vehicle-mounted semiconductor device able to suppress any increase in temperature in an active element. The vehicle-mounted semiconductor device is provided with a semiconductor substrate, a plurality of active elements formed on the semiconductor substrate, a plurality of trenches for enclosing and thereby insulating and separating the plurality of active elements, and terminals for establishing a connection to the outside through parallel connection of the plurality of active elements insulated and separated by different trenches among the plurality of trenches.
(FR) L'invention consiste à fournir un dispositif semi-conducteur monté sur un véhicule susceptible de supprimer toute augmentation de température dans un élément actif. Le dispositif semi-conducteur monté sur un véhicule est muni d'un substrat semi-conducteur, d'une pluralité d'éléments actifs formés sur le substrat semi-conducteur, d'une pluralité de tranchées pour renfermer et ainsi isoler et séparer la pluralité d'éléments actifs, et de bornes pour établir une connexion avec l'extérieur par le biais d'une connexion parallèle de la pluralité d'éléments actifs isolés et séparés par différentes tranchées parmi la pluralité de tranchées.
(JA) 能動素子の温度上昇を抑制することができる車載用半導体装置を提供する。 車載用半導体装置は、半導体基板と、半導体基板上に形成される複数の能動素子と、複数の能動素子を囲んで絶縁分離する複数のトレンチと、複数のトレンチ中の異なるトレンチで絶縁分離された複数の能動素子を並列に接続して外部と接続するための端子と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)