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|1. (WO2017038299) SPUTTERING SILICON TARGET MATERIAL|
|Applicants:||MITSUBISHI MATERIALS CORPORATION
MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD.
|Title:||SPUTTERING SILICON TARGET MATERIAL|
A sputtering silicon target material (10) according to the present invention is used when magnetron sputtering is performed in cases where the sputtering atmosphere contains at least oxygen gas. The target material (10) has a first region (11) and a second region (12) that respectively become, when magnetron sputtering is performed, an erosion section because of the surface of the silicon target material (10) being sputtered and a non-erosion section that is not sputtered. A layer (13) that prevents cracking of the target material during sputtering is included in the second region (12).