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1. (WO2017038299) SPUTTERING SILICON TARGET MATERIAL

Pub. No.:    WO/2017/038299    International Application No.:    PCT/JP2016/071684
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Tue Jul 26 01:59:59 CEST 2016
IPC: C23C 14/34
Applicants: MITSUBISHI MATERIALS CORPORATION
三菱マテリアル株式会社
MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD.
三菱マテリアル電子化成株式会社
Inventors: TSUZUKIHASHI, Koji
続橋 浩司
KONISHI, Nozomi
小西 希
KANAI, Masahiro
金井 昌弘
SHIONO, Ichiro
塩野 一郎
YOSUKE, Masanori
除補 正則
Title: SPUTTERING SILICON TARGET MATERIAL
Abstract:
A sputtering silicon target material (10) according to the present invention is used when magnetron sputtering is performed in cases where the sputtering atmosphere contains at least oxygen gas. The target material (10) has a first region (11) and a second region (12) that respectively become, when magnetron sputtering is performed, an erosion section because of the surface of the silicon target material (10) being sputtered and a non-erosion section that is not sputtered. A layer (13) that prevents cracking of the target material during sputtering is included in the second region (12).