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|1. (WO2017038296) SEMICONDUCTOR DEVICE|
A semiconductor device has a diode (200) provided with: a first-electroconductivity-type drift layer (1); a first-electroconductivity-type cathode region (4) formed on the back-surface side of the drift layer; a second-electroconductivity-type region (5) formed on the surface-layer portion of the front-surface side of the drift layer; a plurality of trenches (6) formed to be deeper than the second-electroconductivity-type region, the plurality of trenches (6) dividing the second electroconductivity-type region into multiple sections, and constituting an anode region (5b) with the second-electroconductivity-type region; a gate insulation film (8) formed on the front surface of the trenches; a gate electrode (9) formed on the front surface of the gate insulation film; an upper electrode (11) that is electrically connected to the anode region; and a lower electrode (12) that is electrically connected to the cathode region. The width of a portion of the plurality of trenches having the narrowest gap in the drift layer is defined as the mesa width, and the mesa width is set to be 0.3 µm or more.