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1. (WO2017038296) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/038296    International Application No.:    PCT/JP2016/071518
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Sat Jul 23 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 21/8234
H01L 27/04
H01L 27/06
H01L 27/088
H01L 29/739
H01L 29/861
H01L 29/868
Applicants: DENSO CORPORATION
株式会社デンソー
Inventors: CHENG Weitao
程 イ涛
TAKAHASHI Shigeki
高橋 茂樹
SUMITOMO Masakiyo
住友 正清
Title: SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device has a diode (200) provided with: a first-electroconductivity-type drift layer (1); a first-electroconductivity-type cathode region (4) formed on the back-surface side of the drift layer; a second-electroconductivity-type region (5) formed on the surface-layer portion of the front-surface side of the drift layer; a plurality of trenches (6) formed to be deeper than the second-electroconductivity-type region, the plurality of trenches (6) dividing the second electroconductivity-type region into multiple sections, and constituting an anode region (5b) with the second-electroconductivity-type region; a gate insulation film (8) formed on the front surface of the trenches; a gate electrode (9) formed on the front surface of the gate insulation film; an upper electrode (11) that is electrically connected to the anode region; and a lower electrode (12) that is electrically connected to the cathode region. The width of a portion of the plurality of trenches having the narrowest gap in the drift layer is defined as the mesa width, and the mesa width is set to be 0.3 µm or more.