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1. (WO2017038256) IMAGING ELEMENT, MULTILAYER IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE

Pub. No.:    WO/2017/038256    International Application No.:    PCT/JP2016/070637
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Thu Jul 14 01:59:59 CEST 2016
IPC: H01L 27/146
H01L 51/42
Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
ソニーセミコンダクタソリューションズ株式会社
Inventors: NEGISHI Yuki
根岸 佑樹
OBANA Yoshiaki
尾花 良哲
Title: IMAGING ELEMENT, MULTILAYER IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE
Abstract:
This imaging element is provided with a first electrode 21, a second electrode 22 and a photoelectric conversion layer 30 that is arranged between the first electrode 21 and the second electrode 22. The photoelectric conversion layer 30 is formed of: a diindenoperylene derivative that has a maximum absorption peak within a wavelength range from 450 nm to 600 nm, while having a structure of formula (1); and an n-type organic material that adsorbs green. Electric current generated in the photoelectric conversion layer 30 by means of light irradiation is taken out to the outside via the first electrode 21 and the second electrode 22 by applying a voltage to the first electrode 21 and the second electrode 22.