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1. (WO2017038214) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/038214 International Application No.: PCT/JP2016/068388
Publication Date: 09.03.2017 International Filing Date: 21.06.2016
IPC:
H02M 7/48 (2007.01)
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
富士電機株式会社 FUJI ELECTRIC CO.,LTD. [JP/JP]; 神奈川県川崎市川崎区田辺新田1番1号 1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-shi, Kanagawa 2109530, JP
Inventors:
荒木 龍 ARAKI Ryu; JP
Agent:
廣瀬 一 HIROSE Hajime; JP
Priority Data:
2015-16970928.08.2015JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract:
(EN) Provided is a semiconductor device that can reduce switching loss. This semiconductor device has first semiconductor elements (Su)‑(Sw) and second semiconductor elements (Sx)‑(Sz) that are connected in series, wherein the first semiconductor elements are constituted by low switching loss semiconductor elements having a smaller switching loss than that of the second semiconductor elements, and the second semiconductor elements are constituted by low conduction loss semiconductor elements having a smaller conduction loss than that of the first semiconductor elements.
(FR) L'invention concerne un dispositif à semi-conducteur qui peut réduire les pertes de commutation. Ce dispositif à semi-conducteur possède des premiers éléments semi-conducteurs (Su)-(Sw) et des seconds éléments semi-conducteurs (Sx)-(Sz) qui sont connectés en série, lesquels premiers éléments semi-conducteurs sont constitués par des éléments semi-conducteurs à faible perte de commutation ayant une plus petite perte de commutation que celle des seconds éléments semi-conducteurs, et lesquels seconds éléments semi-conducteurs sont constitués par des éléments semi-conducteurs à faible perte de conduction ayant une plus petite perte de conduction que celle des premiers éléments semi-conducteurs.
(JA) スイッチング損失を低減することができる半導体装置を提供する。半導体装置を、直列に接続した第1半導体素子(Su)~(Sw)と第2半導体素子(Sx)~(Sz)と有し、第1半導体素子を第2半導体素子のスイッチング損失より小さいスイッチング損失を有する低スイッチング損失半導体素子で構成し、第2半導体素子を第1半導体素子の導通損失より小さい導通損失を有する低導通損失半導体素子で構成した。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)