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1. (WO2017038139) NITRIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/038139    International Application No.:    PCT/JP2016/060504
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Thu Mar 31 01:59:59 CEST 2016
IPC: H01L 21/338
H01L 21/336
H01L 27/095
H01L 29/06
H01L 29/41
H01L 29/778
H01L 29/78
H01L 29/812
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: ICHIJOH, Hisao
一條 尚生
KUBO, Masaru
久保 勝
FUKUMI, Masayuki
福見 公孝
FUJII, Norihisa
藤井 敬久
Title: NITRIDE SEMICONDUCTOR DEVICE
Abstract:
A nitride semiconductor device is provided with a second insulating film (22) covering at least a drain electrode (19) and a thermal stress reducing part for reducing thermal stress at a position where thermal stress generated between the drain electrode (19) and the second insulating film (22) is the highest during load shorting. A thermal stress reducing part (19f) is a drain field plate (19f) formed by the upper part of the drain electrode (19) extending toward a source electrode (18).