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1. (WO2017038108) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Pub. No.:    WO/2017/038108    International Application No.:    PCT/JP2016/053635
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Tue Feb 09 00:59:59 CET 2016
IPC: H01L 21/3205
H01L 21/768
H01L 23/522
Applicants: SOCIONEXT INC.
株式会社ソシオネクスト
Inventors: OHIRA, Hikaru
大平 光
OCHIMIZU, Hirosato
落水 洋聡
OWADA, Tamotsu
大和田 保
Title: SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Abstract:
Provided is a semiconductor device having a highly reliable through via hole. This semiconductor device has: a semiconductor substrate; first wiring formed in a first wiring layer on the semiconductor substrate; a through via hole, which is penetrating the semiconductor substrate, and is connected to the first wiring; and a first insulating film positioned at an area corresponding to an inter-wiring space of the first wiring, said area being at the interface between the through via hole and the first wiring layer.