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1. (WO2017038102) METHOD FOR MANUFACTURING N-TYPE OHMIC ELECTRODE, AND N-TYPE OHMIC ELECTRODE, N-TYPE ELECTRODE, AND GROUP-III-NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

Pub. No.:    WO/2017/038102    International Application No.:    PCT/JP2016/004024
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Sat Sep 03 01:59:59 CEST 2016
IPC: H01L 33/40
H01L 33/32
Applicants: DOWA ELECTRONICS MATERIALS CO., LTD.
DOWAエレクトロニクス株式会社
Inventors: TOYOTA, Tatsunori
豊田 達憲
Title: METHOD FOR MANUFACTURING N-TYPE OHMIC ELECTRODE, AND N-TYPE OHMIC ELECTRODE, N-TYPE ELECTRODE, AND GROUP-III-NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Abstract:
Provided is a method for manufacturing an n-type ohmic electrode capable of making good ohmic contact with an n-type AlxGa1-xN (0.5≤x≤1) layer. The method for manufacturing an n-type ohmic electrode according to the present invention is characterized by comprising: a first step for forming, on a surface of an n-type AlxGa1-xN (0.5≤x≤1) layer 30, a first metal layer 11 made of Ti or Hf; a second step for forming, on a surface of the first metal layer 11, a second metal layer 12 made of Sn; a third step for forming, on a surface of the second metal layer 12, a third metal layer 13 made of V or Mo; a fourth step for forming, on a surface of the third metal layer 13, a fourth metal layer 14 made of Al; and a fifth step for performing heat treatment on the first metal layer 11, the second metal layer 12, the third metal layer 13, and the fourth metal layer 14.