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1. (WO2017038075) METHOD FOR PRODUCING GLASS WITH FINE STRUCTURE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/038075 International Application No.: PCT/JP2016/003931
Publication Date: 09.03.2017 International Filing Date: 29.08.2016
IPC:
C03C 15/00 (2006.01) ,C03C 23/00 (2006.01) ,B23K 26/00 (2014.01) ,B23K 26/382 (2014.01) ,B23K 26/53 (2014.01) ,H01L 21/306 (2006.01) ,H01L 21/308 (2006.01) ,C03C 3/091 (2006.01) ,C03C 3/093 (2006.01)
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15
Surface treatment of glass, not in the form of fibres or filaments, by etching
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
23
Other surface treatment of glass not in the form of fibres or filaments
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
[IPC code unknown for B23K 26/382][IPC code unknown for B23K 26/53]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3
Glass compositions
04
containing silica
076
with 40% to 90% silica by weight
089
containing boron
091
containing aluminium
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3
Glass compositions
04
containing silica
076
with 40% to 90% silica by weight
089
containing boron
091
containing aluminium
093
containing zinc or zirconium
Applicants:
日本板硝子株式会社 NIPPON SHEET GLASS COMPANY, LIMITED [JP/JP]; 東京都港区三田三丁目5番27号 5-27, Mita 3-chome, Minato-ku, Tokyo 1086321, JP
Inventors:
平沼 裕司 HIRANUMA, Yuji; JP
Agent:
鎌田 耕一 KAMADA, Koichi; JP
田村 康晃 TAMURA, Yasuaki; JP
Priority Data:
2015-17055131.08.2015JP
Title (EN) METHOD FOR PRODUCING GLASS WITH FINE STRUCTURE
(FR) PROCÉDÉ DE PRODUCTION DE VERRE PRÉSENTANT UNE STRUCTURE FINE
(JA) 微細構造付きガラスの製造方法
Abstract:
(EN) The invention provides a method for producing glass with a fine structure that suppresses formation of low-gradient pores and forms a fine structure of deep holes or grooves and the like having higher straightness in the direction of thickness of the substrate. The invention pertains to a method for producing glass with a fine structure having an etching step for etching by radiating ultrasonic waves onto the glass, the etching solution used in the etching step including hydrofluoric acid; one or more inorganic acids selected from the group comprising nitric acid, hydrochloric acid, and sulfuric acid; and a surfactant. In the etching solution, the hydrofluoric acid concentration is 0.05-8.0 mass%, the inorganic acid concentration is 2.0-16.0 mass%, and the surfactant content is 5-1000 ppm.
(FR) L'invention concerne un procédé de production de verre présentant une structure fine qui supprime la formation de pores à faible gradient et forme une structure fine de trous ou de rainures et analogues profonds, présentant une plus grande rectitude dans la direction d'épaisseur du substrat. L'invention concerne un procédé de production de verre présentant une structure fine, présentant une étape de gravure pour graver par irradiation d'ondes ultrasonores sur le verre, la solution de gravure utilisée dans l'étape de gravure comprenant de l'acide fluorhydrique ; un ou plusieurs acides inorganiques choisis dans le groupe comprenant de l'acide nitrique, de l'acide chlorhydrique et de l'acide sulfurique ; et un tensioactif. Dans la solution de gravure, la concentration en acide fluorhydrique est de 0,05-8,0 % en masse, la concentration en acide inorganique est de 2,0-16,0 % en masse et la teneur en tensioactif est de 5-1000 ppm.
(JA) 本発明は、低勾配の孔の形成を抑え、基板の厚み方向について、よりストレート性が高く、深い孔又は溝等の微細構造が形成された微細構造付きガラスの製造方法を提供する。本発明は、ガラスに超音波を照射してエッチングするエッチング工程を有し、前記エッチング工程に用いるエッチング液がフッ化水素酸;硝酸、塩酸及び硫酸からなる群から選ばれる1種以上の無機酸;及び界面活性剤を含み、前記エッチング液において、フッ化水素酸濃度0.05質量%~8.0質量%であり、無機酸濃度2.0質量%~16.0質量%であり、界面活性剤の含有量が5ppm~1000ppmである、微細構造付きガラスの製造方法に関する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)