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1. (WO2017038052) IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE
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Pub. No.: WO/2017/038052 International Application No.: PCT/JP2016/003845
Publication Date: 09.03.2017 International Filing Date: 24.08.2016
IPC:
H04N 5/365 (2011.01) ,H01L 27/146 (2006.01) ,H04N 5/374 (2011.01) ,H04N 5/378 (2011.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
365
applied to fixed-pattern noise, e.g. non-uniformity of response
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
378
Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
石井 基範 ISHII, Motonori; --
廣瀬 裕 HIROSE, Yutaka; --
山田 翔太 YAMADA, Shota; --
Agent:
鎌田 健司 KAMATA, Kenji; JP
前田 浩夫 MAEDA, Hiroo; JP
Priority Data:
2015-16967228.08.2015JP
Title (EN) IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE ET DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS
(JA) 撮像装置、及び固体撮像装置
Abstract:
(EN) The imaging device (200) according to the present invention comprises a solid-state imaging device (201) that has a plurality of pixels (204) arranged in a two-dimensional manner, and a signal processing device (202) that processes signals output from the solid-state imaging device (201), wherein: a correction signal is generated based on the difference between a first preliminary correction signal, which is obtained by directly applying a first voltage amplitude to a signal retention part within a pixel (204), and a second preliminary correction signal, which is obtained by applying a second voltage amplitude different from the first voltage amplitude to the signal retention part; the solid-state imaging device (201) captures an image, thereby obtaining an image signal; and the correction signal is applied to the obtained image signal so as to generate a corrected image.
(FR) Le dispositif d'imagerie (200) selon la présente invention comprend un dispositif d'imagerie à semi-conducteurs (201) qui a une pluralité de pixels (204) agencés de manière bidimensionnelle, et un dispositif de traitement de signal (202) qui traite des signaux émis par le dispositif d'imagerie à semi-conducteurs (201) : un signal de correction étant généré sur la base de la différence entre un premier signal de correction préliminaire, qui est obtenu par application directe d'une première amplitude de tension sur une partie de rétention de signal dans un pixel (204), et un second signal de correction préliminaire, qui est obtenu par application d'une seconde amplitude de tension différente de la première amplitude de tension sur la partie de rétention de signal ; le dispositif d'imagerie à semi-conducteurs (201) capture une image, ce qui permet d'obtenir un signal d'image ; et le signal de correction est appliqué sur le signal d'image obtenu de façon à générer une image corrigée.
(JA) 撮像装置(200)は、二次元状に配列された複数の画素(204)を有する固体撮像装置(201)と、固体撮像装置(201)からの出力信号を処理する信号処理装置(202)とを含む装置であって、画素(204)内の信号蓄積部に第1の電圧振幅を直接印加することにより得られる第1の仮補正信号と、前記信号蓄積部に前記第1の電圧振幅とは異なる第2の電圧振幅を印加することにより得られる第2の仮補正信号との差分に基づき補正信号を生成し、固体撮像装置(201)が撮影駆動を行うことで画像信号を取得し、前記画像信号に前記補正信号を適用することで補正画像を生成する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)