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1. (WO2017038032) POLISHING METHOD AND POLISHING APPARATUS

Pub. No.:    WO/2017/038032    International Application No.:    PCT/JP2016/003745
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Aug 17 01:59:59 CEST 2016
IPC: B24B 37/015
H01L 21/304
Applicants: SHIN-ETSU HANDOTAI CO.,LTD.
信越半導体株式会社
Inventors: UENO, Junichi
上野 淳一
SATO, Michito
佐藤 三千登
ISHII, Kaoru
石井 薫
Title: POLISHING METHOD AND POLISHING APPARATUS
Abstract:
This polishing method performs a polishing process by causing a wafer held by a holding means to make a sliding contact with a polishing cloth attached to a surface plate while a refrigerant is supplied to a refrigerant flow path provided to the surface plate that is rotationally driven by a motor to cool the surface plate. The polishing method is characterized in that, during a standby period after a wafer polishing process has ended but before the next wafer polishing process is to be performed, the flow rate of the refrigerant is controlled to be lower than the flow rate of the refrigerant during polishing when the wafer polishing process is performed, the surface plate is rotated by the motor, and a water retention liquid of which the temperature is adjusted to a temperature equal to or higher than room temperature is supplied to the polishing cloth. Accordingly, provided are a polishing method and a polishing apparatus that suppress lowering of the temperature of the surface plate during the standby period, rending dummy polishing before resuming the polishing process to be unnecessary.