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1. (WO2017038031) LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/038031 International Application No.: PCT/JP2016/003740
Publication Date: 09.03.2017 International Filing Date: 15.08.2016
IPC:
H01L 33/22 (2010.01) ,H01L 21/306 (2006.01) ,H01L 33/30 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
Applicants:
信越半導体株式会社 SHIN-ETSU HANDOTAI CO.,LTD. [JP/JP]; 東京都千代田区大手町二丁目2番1号 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
石崎 順也 ISHIZAKI, Junya; JP
古屋 翔吾 FURUYA, Shogo; JP
Agent:
好宮 幹夫 YOSHIMIYA, Mikio; JP
小林 俊弘 KOBAYASHI, Toshihiro; JP
Priority Data:
2015-17273002.09.2015JP
Title (EN) LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT ET SON PROCÉDÉ DE FABRICATION
(JA) 発光素子及び発光素子の製造方法
Abstract:
(EN) A light-emitting element according to the present invention comprises a removed portion from which a light-emitting portion has been removed; an un-removed portion other than the removed portion; a first ohmic electrode disposed on a surface of a first semiconductor layer of the un-removed portion; and a second ohmic electrode disposed on a surface of a window layer/support substrate of the removed portion, and is characterized in that: at least a part of the surface of the first semiconductor layer and a side surface of the light-emitting portion are covered with an insulating protection film; and the surface of the first semiconductor layer other than the portions where the first ohmic electrode is formed, the surface of the window layer/support substrate other than the portions where the second ohmic electrode is formed in the removed portion, and a side surface and a back surface of the window layer/support substrate are made coarse. In this way, there is provided a light-emitting element having a light-emitting portion and a window layer/support substrate wherein an increase in external quantum efficiency is achieved by making more regions of the surfaces of the light-emitting portion and the window layer/support substrate coarse.
(FR) La présente invention concerne un élément électroluminescent qui comprend une partie retirée, de laquelle une partie électroluminescente a été retirée ; une partie non retirée autre que la partie retirée ; une première électrode ohmique disposée sur une surface d'une première couche semi-conductrice de la partie non retirée ; une seconde électrode ohmique disposée sur une surface d'une couche de fenêtre/d'un substrat de support de la partie retirée. Ledit élément électroluminescent est caractérisé en ce que : au moins une partie de la surface de la première couche semi-conductrice et une surface latérale de la partie électroluminescente sont recouvertes d'un film de protection isolant ; la surface de la première couche semi-conductrice, autre que les parties où la première électrode ohmique est formée, la surface de la couche de fenêtre/du substrat de support, autre que les parties où la seconde électrode ohmique est formée dans la partie retirée, et une surface latérale et une surface arrière de la couche de fenêtre/du substrat de support sont rendues grossières. De cette manière, un élément électroluminescent est obtenu qui comprend une partie électroluminescente et une couche de fenêtre/de substrat de support, une augmentation du rendement quantique externe étant obtenue par le fait de rendre grossières davantage de régions des surfaces de la partie électroluminescente et de la couche de fenêtre/de substrat de support.
(JA) 本発明の発光素子は、発光部が除去された除去部と、除去部以外の非除去部と、該非除去部の第一半導体層の表面上に設けられた第一オーミック電極と、除去部の窓層兼支持基板の表面上に設けられた第二オーミック電極とを有し、第一半導体層の表面及び発光部の側面の少なくとも一部は絶縁保護膜で被覆され、第一半導体層の表面上の第一オーミック電極の形成部以外と、窓層兼支持基板の表面上の除去部における第二オーミック電極の形成部以外と、窓層兼支持基板の側面及び裏面とが粗面化されたものであることを特徴とする発光素子である。これにより、発光部と窓層兼支持基板を有する発光素子において、発光部と窓層兼支持基板の表面のより多くの領域を粗面化することで外部量子効率を高めた発光素子が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)