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1. (WO2017038008) OXIDE SEMICONDUCTOR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2017/038008    International Application No.:    PCT/JP2016/003590
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Thu Aug 04 01:59:59 CEST 2016
IPC: H01L 49/00
H01L 31/0256
Applicants: KABUSHIKI KAISHA NIHON MICRONICS
株式会社日本マイクロニクス
Inventors: TSUNOKUNI, Kazuyuki
津國 和之
KUDOH, Takuo
工藤 拓夫
TAKANO, Hikaru
高野 光
OGASAWARA, Juri
小笠原 樹理
Title: OXIDE SEMICONDUCTOR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME
Abstract:
An oxide semiconductor secondary battery according to the present embodiment is provided with: a first electrode (14); an n-type metal oxide semiconductor layer (16) formed on the first electrode (14); a charge layer (18) that is formed on the n-type metal oxide semiconductor layer (16) and that is made of material containing an insulating material and an n-type metal oxide semiconductor; a p-type metal oxide semiconductor layer (20) formed on the charge layer (18); and a second electrode 22 formed on the p-type metal oxide semiconductor layer (20). The n-type metal oxide semiconductor layer (16) is characterized by containing a titanium dioxide having an anatase structure or an amorphous structure.