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1. (WO2017037693) HETEROJUNCTION PHOTOVOLTAIC DEVICE
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Pub. No.: WO/2017/037693 International Application No.: PCT/IL2016/050919
Publication Date: 09.03.2017 International Filing Date: 24.08.2016
IPC:
H01L 31/0352 (2006.01) ,H01L 31/06 (2012.01) ,H01L 31/04 (2014.01)
[IPC code unknown for H01L 31/0352][IPC code unknown for H01L 31/06][IPC code unknown for H01L 31/04]
Applicants:
TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED [IL/IL]; Senate Building Technion City 3200004 Haifa, IL
Inventors:
TESSLER, Nir; IL
Priority Data:
62/212,72501.09.2015US
Title (EN) HETEROJUNCTION PHOTOVOLTAIC DEVICE
(FR) DISPOSITIF PHOTOVOLTAÏQUE À HÉTÉROJONCTION
Abstract:
(EN) A photovoltaic device comprising a light absorbing structure having a general energy gap level of light absorbing material and being located between first and second electrodes configured for collection of positive and negative charge carriers therefrom respectively. The light absorbing structure is configured to provide at least one of the following: valence band energy levels being reduced by 10% -50% of the energy gap within a range of 10-lOOnm from an interface of the absorbing structure and the first electrode; and conduction band energy levels being raised by 10%-50% of the energy gap within a range of 10-lOOnm from an interface of the absorbing structure and the second electrode.
(FR) L'invention porte sur un dispositif photovoltaïque comprenant une structure d'absorption de lumière ayant un niveau général de bande interdite de matériau absorbant la lumière et située entre des première et seconde électrodes conçues pour recueillir des porteurs de charges positives et négatives provenant d'elles, respectivement. La structure d'absorption de lumière est conçue pour procurer : des niveaux d'énergie de bande de valence qui sont réduits de 10 % à 50 % de la bande interdite dans une plage de 10 à 100 nm d'une interface de la structure d'absorption et de la première électrode; et/ou des niveaux d'énergie de bande de conduction qui sont augmentés de 10 % à 50 % de la bande interdite dans une plage de 10 à 100 nm d'une interface de la structure absorbante et de la seconde électrode.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)