Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017037564) OXIDE SEMICONDUCTOR, TRANSISTOR, AND SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/037564 International Application No.: PCT/IB2016/054995
Publication Date: 09.03.2017 International Filing Date: 22.08.2016
IPC:
H01L 29/786 (2006.01) ,C01G 15/00 (2006.01) ,H01L 21/363 (2006.01) ,H01L 21/365 (2006.01) ,H01L 21/8242 (2006.01) ,H01L 27/108 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
15
Compounds of gallium, indium, or thallium
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
365
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8242
Dynamic random access memory structures (DRAM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
Applicants:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase Atsugi-shi, Kanagawa 2430036, JP
Inventors:
YAMAZAKI, Shunpei; JP
TSUBUKU, Masashi; --
OOTA, Masashi; JP
SHIMOMURA, Akihisa; --
YAMANE, Yasumasa; JP
Priority Data:
2015-16893128.08.2015JP
2015-25692228.12.2015JP
2016-04023702.03.2016JP
2016-05521518.03.2016JP
Title (EN) OXIDE SEMICONDUCTOR, TRANSISTOR, AND SEMICONDUCTOR DEVICE
(FR) SEMI-CONDUCTEUR À OXYDE, TRANSISTOR, ET DISPOSITIF À SEMI-CONDUCTEUR
Abstract:
(EN) A novel oxide semiconductor is provided. An oxide semiconductor contains In, an element M (M represents Al, Ga, Y, or Sn), and Zn. The oxide semiconductor has little characteristics variation and structure change and has high electron mobility in the case where the atomic ratio of In to M and Zn in the oxide semiconductor ranges from 4:2:3 to 4:2:4.1 or is a neighborhood thereof.
(FR) L'invention concerne un nouveau semi-conducteur à oxyde. Un semi-conducteur à oxyde contient In, un élément M (M représente Al, Ga, Y, ou Sn), et Zn. Le semi-conducteur à oxyde présente une faible variation de caractéristiques et un faible changement de structure et présente une haute mobilité d'électrons lorsque le rapport atomique de In sur M et Zn dans le semi-conducteur à oxyde est dans la plage de 4:2:3 à 4:2:4,1 ou est voisin de celle-ci.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)