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1. (WO2017037448) DOUBLE PEROVSKITE
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Pub. No.: WO/2017/037448 International Application No.: PCT/GB2016/052691
Publication Date: 09.03.2017 International Filing Date: 31.08.2016
IPC:
H01L 51/42 (2006.01) ,C07F 1/10 (2006.01) ,C07F 5/00 (2006.01)
[IPC code unknown for H01L 51/42][IPC code unknown for C07F 1/10][IPC code unknown for C07F 5]
Applicants:
OXFORD UNIVERSITY INNOVATION LIMITED [GB/GB]; Buxton Court 3 West Way Oxford OX2 0JB, GB
Inventors:
SNAITH, Henry James; GB
HAGIGHIRAD, Amir Abbas; GB
GIUSTINO, Feliciano; GB
FILIP, Marina; GB
VOLONAKIS, George; GB
Agent:
SILCOCK, Peter James; GB
Priority Data:
1515546.802.09.2015GB
1603804.404.03.2016GB
Title (EN) DOUBLE PEROVSKITE
(FR) PÉROVSKITE DOUBLE
Abstract:
(EN) The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].
(FR) La présente invention concerne un dispositif à semi-conducteur comprenant un matériau semi-conducteur, le matériau semi-conducteur comprenant un composé comprenant : (i) un ou plusieurs premiers monocations [A] ; (ii) un ou plusieurs seconds monocations [BI] ; (iii) un ou plusieurs trications [BIII] ; et (iv) un ou plusieurs anions halogénure [X]. L'invention concerne également un procédé de fabrication d'un dispositif à semi-conducteur comprenant ledit matériau semi-conducteur. L'invention concerne également un composé comprenant : (i) un ou plusieurs premiers monocations [A] ; (ii) un ou plusieurs seconds monocations [BI] sélectionnés parmi Cu+, Ag+ et Au+ ; (iii) un ou plusieurs trications [BIII] ; et (iv) un ou plusieurs anions halogénure [X].
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)