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1. (WO2017036034) IMAGE ELEMENT STRUCTURE OF VISIBLE LIGHT AND INFRARED LIGHT MIXED IMAGING DETECTOR AND FABRICATING METHOD THEREFOR

Pub. No.:    WO/2017/036034    International Application No.:    PCT/CN2015/099480
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Dec 30 00:59:59 CET 2015
IPC: H01L 27/146
Applicants: SHANGHAI IC R & D CENTER CO., LTD.
上海集成电路研发中心有限公司
Inventors: KANG, Xiaoxu
康晓旭
CHEN, Shoumian
陈寿面
Title: IMAGE ELEMENT STRUCTURE OF VISIBLE LIGHT AND INFRARED LIGHT MIXED IMAGING DETECTOR AND FABRICATING METHOD THEREFOR
Abstract:
An image element structure of a visible light and infrared light mixed imaging detector and a fabricating method therefor, comprising: a wafer (100) used as a light filtering layer; a visible light inductive area and an external circuit; a media layer (104); and an infrared light inductive area. The infrared light inductive area comprises: an infrared light inductive component (106); an electrode layer (107); an upper release protection layer (108), wherein a first release hole (K1) is provided at the portion where the bottom of the release protection layer in the electrode layer is in contact with the top of the infrared light inductive component; a first cavity (111) below the first release hole; a plurality of through-holes (109) below the edge of the electrode layer; a second release hole (K2) of the media layer at the outer side of the through-holes; a second cavity below the second release hole; a support component (114) of a third release hole (K3) at the top; a third cavity (113) between the support component and the infrared light inductive area; and a coverage material layer (116).