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1. (WO2017036011) TWO-PHOTON-ABSORPTION-BASED SILICON NANOWIRE PHOTODETECTOR

Pub. No.:    WO/2017/036011    International Application No.:    PCT/CN2015/098584
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Fri Dec 25 00:59:59 CET 2015
IPC: H01L 31/105
H01L 31/18
Applicants: SHANGHAI JIAO TONG UNIVERSITY
上海交通大学
Inventors: DAN, Yaping
但亚平
SIAMPOUR, Hamidreza
新安坡尔•哈米德雷扎
Title: TWO-PHOTON-ABSORPTION-BASED SILICON NANOWIRE PHOTODETECTOR
Abstract:
A two-photon-absorption-based silicon nanowire photodetector comprises: a first silicon layer (1); a silicon dioxide layer (2); a second silicon layer (3) having a concentric-circle grating shape formed by an etching process; a silicon nanowire (4) formed by etching the second silicon layer (3), and configured to receive an incident light; a plasma antenna pair (5) configured to enhance luminous intensity of the incident light entering nano-spacing where the nanowire (4) is located. Silicon has a low photon absorption coefficient in a communication band and is irrelevant to the luminous intensity, since a photon energy in the communication band is less than a width of a forbidden band of a semiconductor silicon. Similarly, the silicon also has a low two-photon absorption coefficient. Nevertheless, the two-photon absorption coefficient is proportional to the luminous intensity, and consequently, increasing the luminous intensity can linearly increase absorption of two photons. The plasma antenna can maximally restrict the incident light in the nano-spacing where the silicon nanowire (4) is, thereby enhancing the luminous intensity by at least 5 levels, increasing an overall absorption coefficient of the two-photon absorption of the silicon, generating a large amount of electron-hole pairs in the silicon nanowire (4) and resulting in a photon current.