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1. (WO2017035780) TUNNEL FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

Pub. No.:    WO/2017/035780    International Application No.:    PCT/CN2015/088754
Publication Date: Fri Mar 10 00:59:59 CET 2017 International Filing Date: Wed Sep 02 01:59:59 CEST 2015
IPC: H01L 29/739
H01L 21/331
Applicants: HUAWEI TECHNOLOGIES CO., LTD.
华为技术有限公司
Inventors: YANG, Xichao
杨喜超
ZHANG, Chenxiong
张臣雄
Title: TUNNEL FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
Abstract:
The invention relates to the technical field of semiconductors, and specifically, to a tunnel field-effect transistor (TFET) and a manufacturing method thereof. A channel area (202) is connected to a source area (201) and a drain area (203) of the TFET. A pocket layer (204) and a gate oxide layer (205) are fabricated between the source area and a gate area (206). A metal layer (208) is fabricated at a first area of the source area. The first area is located at a side where the source area is in contact with the pocket layer. At least a part of the pocket layer is configured to cover the metal layer. The pocket layer and a second area of the source area form a first tunneling junction of the TFET. The pocket layer and the metal layer form a second tunneling junction of the TFET. By fabricating the metal layer at the first area of the source area, the pocket layer and the second area where a non-metal layer of the source area is located form the first tunneling junction of the TFET, and the pocket layer and the metal layer form the second tunneling junction of the TFET. In comparison to a TFET comprising a tunneling junction formed of only a pocket layer and a source area, the embodiment can increase, via the tunneling junction formed of the pocket layer and the metal layer, a tunneling current, thereby increasing the tunneling current of the TFET without increasing an area of the TFET.