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1. (WO2017035589) NARROWBAND PHOTODETECTOR
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Pub. No.: WO/2017/035589 International Application No.: PCT/AU2016/050819
Publication Date: 09.03.2017 International Filing Date: 31.08.2016
IPC:
H01L 31/09 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/0248 (2006.01) ,H01L 31/101 (2006.01) ,H01L 31/18 (2006.01) ,H01L 51/46 (2006.01) ,H01L 51/48 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
09
Devices sensitive to infra-red, visible or ultra- violet radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
46
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
48
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
THE UNIVERSITY OF QUEENSLAND [AU/AU]; The University of Queensland St Lucia, Queensland 4072, AU
Inventors:
BURN, Paul Leslie; AU
MEREDITH, Paul; AU
LIN, Qianqian; AU
ARMIN, Ardalan; AU
Agent:
DAVIES COLLISON CAVE PTY LTD; Level 10, 301 Coronation Drive Milton, Queensland 4064, AU
Priority Data:
201590356401.09.2015AU
201590370511.09.2015AU
Title (EN) NARROWBAND PHOTODETECTOR
(FR) PHOTODÉTECTEUR À BANDE ÉTROITE
Abstract:
(EN) A narrowband photodetector for detecting radiation in a spectral window, the narrowband photodetector comprising a first electrode that is at least partially transparent to radiation, a second electrode and a photoactive layer that is coated onto at least one of the first electrode, the second electrode and at least one interlayer disposed on at least one of the first and second electrodes. The photoactive layer is provided at least partially between the first and second electrodes, generates charge carriers in response to radiation incident thereon through the first electrode and has an absorption coefficient profile and thickness selected so that radiation in a first spectral window leads to volume generation of charge carriers substantially throughout the photoactive layer and radiation in a second spectral window different to the first spectral window leads to surface generation of charge carriers proximate the first electrode. The photoactive later also has a mobility for charge carriers, such that for an applied voltage across the electrodes, the extraction of surface generated charge carriers is suppressed so that the photodetector shows a photoresponse to radiation in the first spectral window and includes at least one of an inorganic semiconductor and an organic -inorganic hybrid semiconductor.
(FR) L'invention porte sur un photodétecteur à bande étroite destiné à détecter un rayonnement dans une fenêtre spectrale, le photodétecteur à bande étroite comprenant une première électrode qui est au moins partiellement transparente au rayonnement, une seconde électrode, et une couche photoactive revêtue sur la première électrode, la seconde électrode et/ou au moins une couche intermédiaire disposée sur la première électrode et/ou la seconde électrode. La couche photoactive est située au moins partiellement entre les première et seconde électrodes, génère des porteurs de charge en réponse au rayonnement incident sur elle à travers la première électrode, et présente un profil de coefficient d'absorption et une épaisseur sélectionnés de manière qu'un rayonnement dans une première fenêtre spectrale entraîne la génération de porteurs de charge en volume dans sensiblement toute la couche photoactive et qu'un rayonnement dans une seconde fenêtre spectrale différente de la première fenêtre spectrale entraîne la génération de porteurs de charge en surface à proximité de la première électrode. La couche photoactive présente également de la mobilité pour les porteurs de charge, de manière que, pour une tension appliquée entre les électrodes, l'extraction de porteurs de charge générés en surface soit supprimée pour que le photodétecteur présente une photoréponse au rayonnement dans la première fenêtre spectrale, et comprend un semi-conducteur inorganique et/ou un semi-conducteur hybride organique-inorganique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)